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    Degson Electronics Co Ltd DG31-B-05P-13-11A(H)

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    NAC DG31-B-05P-13-11A(H) 915 1
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    Degson Electronics Co Ltd DG31-B-09P-13-00A(H)

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    NAC DG31-B-09P-13-00A(H) 562 1
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    Degson Electronics Co Ltd DG31-B-09P-13-20A(H)

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    NAC DG31-B-09P-13-20A(H) 561 1
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    Degson Electronics Co Ltd DG31-B-10P-13-20A(H)

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    NAC DG31-B-10P-13-20A(H) 200 1
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    DG31B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    btb 400c

    Abstract: LT 7223 BTA 600C 400C 600C BTA SERIES
    Text: 30E D • 7*^23? DG31b72 T '- T J E Z 'ìS 2 ■ SGS-THOMSON V# ii^nm»li ?l sm0S_ BTA/BTB 10 C « Q u g ' i n u m g u n S G S-TH0MS0N TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT (dv/dt c > 5 V/|iS ■ Ig t SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION ->


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    PDF DG31b72 E81734) 0031b7Â T-25-15 btb 400c LT 7223 BTA 600C 400C 600C BTA SERIES

    btb 400c

    Abstract: BTA SERIES triacs BTA TRIAC BTa 12 600c 400C 600C
    Text: 30E D m 7^2^237 DG31b l2 b • fZ 7 ^ 7 # _ S G S -T H O M S O N IL IIO T M D ! B B T A /B T B 0 6 C s G S-TH0MS0N TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 5 V/^s ■ Igt SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION ->


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    PDF DG31bl2 E81734) 7TET237 btb 400c BTA SERIES triacs BTA TRIAC BTa 12 600c 400C 600C

    btb 08

    Abstract: No abstract text available
    Text: 30E D £ÿj • 7^5^537 DG31b5b 4 ■ SGS-THOMSON HOMSON ¡[LIIDljWKS -p .Z 5 ~ i5 BTA/BTB 08 SW S G S-TH0MS0N LOGIC LEVEL TRIACS DESCRIPTION New range suited for applications such as phase control and static switching on inductive or resistive load. ■ Itrms = 8 A at Tc = 80 °C.


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    PDF DG31b5b E81734) DG31bbD CB-415) btb 08

    Untitled

    Abstract: No abstract text available
    Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212


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    PDF fi23SbOS 0031bl0 82C212 M/256 640CHAF SAB82C212

    Untitled

    Abstract: No abstract text available
    Text: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


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    PDF HB56H164EJ 576-word 64-bit ADE-203-697A 16-Mbit HM5118165) 16-bit 74ABT16244)

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 3flE D • ^ 2 7 3 2 5 D031b04 1 ■ NECE M C -4 2 1 0 0 0 A 8 1 ,0 4 8 ,5 7 6 x 8 -B it CMOS D ynam ic RAM M odule NEC Electronics Inc. Description Pin Configurations The M C -421000A 8 is a fast-page 1,048,576-word by 8-bit C M O S dynam ic R A M module designed to operate


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    PDF D031b04 -421000A 576-word C-421000A8 /iPD421000

    24MHZ

    Abstract: 48MHZ PC11 W48S111 W48S111-14
    Text: W CYPRESS PRELIMINARY W48S111-14 Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Reduces measured EMI by as much as 10 dB • l2C programmable to 133 MHz


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    PDF W48S111-14 SEL100/66# 31818-MHz 48-MHz 24-/48-MHz 318-MHz 00Bib7s 24MHZ 48MHZ PC11 W48S111 W48S111-14

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROW N « E DAC600 1 DEMO BOARD AVAILABLE See Appendix A o o CD O < 12-Bit 256MHz Monolithic DIGITAL-TO-ANALOG CONVERTER Q (0 cc FEATURES APPLICATIONS • 12-BIT RESOLUTION • DIRECT DIGITAL SYNTHESIS


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    PDF DAC600 12-Bit 256MHz -73dB 10MHz 17313b5 0031b63

    Untitled

    Abstract: No abstract text available
    Text: TC59GJ632AFB-80,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT StU CbN ^pN bLIJH IC 262,144-WORDX 2-BANKX32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1632AFB is a CM OS synchronous graphics random access memory or& ajiize^a* 262.144


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    PDF TC59GJ632AFB-80 144-WORDX 2-BANKX32-BIT TC59G1632AFB 32-bit. Fiaure29 0Q31fc TC59G1632AFB-80 TQFP100-P-1420-0 OJ75TYP

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)


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    PDF 128Kx IDT71L024 100ns 32-pin, 46-BALL T71L024 576-bit 910-338-207Q

    JHE-BTL70

    Abstract: LH28F160BJHE-BTL70
    Text: P r e l im i n a r y P r o d u c t S p f c ip ic a t io n s m x i-a m i a Integrated Circuits Group LH28F160BJHE-BTL70 Flash Memory 1 6 M 1 M x 1 6 / 2 M x 8 (Model No.: LHF16J07) Spec No.: FM996003 Issue Date: June 22, 1999 aia a ? cia a t m b s a te 3 •


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    PDF LH28F160BJHE-BTL70 x16/2M LHF16J07) FM996003 0031LSQ LHF16J07 TSQP48-P-1220 AA1142 JHE-BTL70 LH28F160BJHE-BTL70