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    Untitled

    Abstract: No abstract text available
    Text: DGB8211 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS


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    PDF DGB8211 Power20m Voltage12 Current150m

    Untitled

    Abstract: No abstract text available
    Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description


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    DGB8332

    Abstract: DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521
    Text: 0585443 ALPHA IN D / SEM ICONDUCTOR DE | DSflS443 ODODS Eb 03E 00526 ôj~ft D 3 Gunn Diodes Features • • • • • • ä j Spot Frequency or Wideband Operation Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications


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    PDF DSflS443 DGB8332 DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521

    gunn diodes

    Abstract: alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281
    Text: ALPHA IN » / SEMICONDUCTOR 4ÔE D • 0SÔ5443 00013=15 fln ■ ALP _ Gunn Diodes To~f-\ \ Features ■ ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications


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    PDF power001 gunn diodes alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281