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    DGSK40 Price and Stock

    IXYS Corporation DGSK40-018A

    DIODE ARR SCHOT 180V 23A TO220-3
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    IXYS Corporation DGSK40-025A

    DIODE ARR SCHOT 250V 18A TO220-3
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    IXYS Corporation DGSK40-025CS

    DIODE ARR SCHOT 250V 31A TO263AA
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    IXYS Corporation DGSK40-025AS

    DIODE ARR SCHOT 250V 18A TO263AA
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    DGSK40 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DGSK40-015A IXYS DIODE SCHOTTKY DIODE 150V 17A 3TO-220AB Original PDF
    DGSK40-015A IXYS 150V gallium arsenide schottky rectifier Original PDF
    DGSK40-018A IXYS DIODE SCHOTTKY DIODE 180V 23A 3TO-220AB Original PDF
    DGSK40-018A IXYS 180V gallium arsenide schottky rectifier Original PDF
    DGSK40-022A IXYS DIODE SCHOTTKY DIODE 220V 13A 3TO-220AB Original PDF
    DGSK40-022A IXYS 220V gallium arsenide schottky rectifier Original PDF
    DGSK40-025A IXYS DIODE SCHOTTKY DIODE 250V 18A 3TO-220AB Original PDF
    DGSK40-025A IXYS 250V gallium arsenide schottky rectifier Original PDF
    DGSK40-025AS IXYS DIODE SCHOTTKY DIODE 250V 18A 2TO-263AB Original PDF
    DGSK40-025CS IXYS Gallium Arsenide Schottky Rectifier Original PDF

    DGSK40 Datasheets Context Search

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    IXAN0041

    Abstract: 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A
    Text: EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute


    Original     		PDF IXAN0041 IXAN0041 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A

    2a 200v schottky diode

    Abstract: IXYS-VUM25-E IXYSVUM25-E Schottky diode TO220 DGS10-018A DGS10-025A DGS20-018A DGS20-025A DGSK20-018A ST Low Forward Voltage Schottky Diode
    Text: EPE Conference, Lausanne, 1999 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information GaAs ' Diodes Contents 1 TO-220 AC Current i %* >> 1 • a C K d y v S l y 1C ^DC TO-220 AB 2 V A V 150/180 150/180 10 20 1.1 0.9 DGS10 DGS20 A A 1.1 0.9 DGSK20 DGSK40 A A 1.5 1.1 DGS10 DGS20 A A 1.5 1.1 DGSK20 DGSK40 A A z 150/180


    OCR Scan     		PDF DGS10 DGS20 DGSK20 DGSK40 DGSK40 O-220