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    DMN3030LSS Search Results

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    DMN3030LSS Price and Stock

    Diodes Incorporated DMN3030LSS-13

    MOSFET N-CH 30V 9A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DMN3030LSS-13 Cut Tape 719 1
    • 1 $0.47
    • 10 $0.404
    • 100 $0.281
    • 1000 $0.17836
    • 10000 $0.17836
    		Buy Now
    DMN3030LSS-13 Digi-Reel 1
    • 1 $0.47
    • 10 $0.404
    • 100 $0.281
    • 1000 $0.17836
    • 10000 $0.17836
    		Buy Now
    DMN3030LSS-13 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.15133
    		Buy Now
    Avnet Americas DMN3030LSS-13 Reel 8 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08566
    		Buy Now
    Mouser Electronics DMN3030LSS-13 4,664
    • 1 $0.47
    • 10 $0.404
    • 100 $0.281
    • 1000 $0.182
    • 10000 $0.14
    		Buy Now
    Newark DMN3030LSS-13 Cut Tape 2,500 5
    • 1 $0.489
    • 10 $0.42
    • 100 $0.292
    • 1000 $0.198
    • 10000 $0.198
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    Bristol Electronics DMN3030LSS-13 79
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    TME DMN3030LSS-13 1
    • 1 $0.342
    • 10 $0.342
    • 100 $0.228
    • 1000 $0.161
    • 10000 $0.14
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    Avnet Silica DMN3030LSS-13 10 Weeks 2,500
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    DMN3030LSS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DMN3030LSS Diodes SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMN3030LSS-13 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A 8-SOIC Original PDF

    DMN3030LSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N3030LS

    Abstract: N3030
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030LS N3030

    N3030LS

    Abstract: No abstract text available
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 18mΩ @ VGS = 10V 9.0A 30mΩ @ VGS = 4.5V 7.0A V(BR)DSS 30V •     Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3030LSS AEC-Q101 DS31261 N3030LS

    N3030

    Abstract: N3030LS DS3126-1
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030 N3030LS DS3126-1

    N3030LS

    Abstract: DMN3030LSS
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030LS DMN3030LSS

    N3030LS

    Abstract: N3030L
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030LS N3030L

    n3030ls

    Abstract: DMN3030LSS DS31261 DMN3030LSS-13 J-STD-020D DS3126-1 N3030L
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 n3030ls DMN3030LSS DMN3030LSS-13 J-STD-020D DS3126-1 N3030L

    N3030LS

    Abstract: N3030l DMN3030LSS DMN3030LSS-13 J-STD-020D
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030LS N3030l DMN3030LSS DMN3030LSS-13 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS DMN3031LSS AEC-Q101 J-STD-020D DS31650

    N3031LS

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS DMN3031LSS AEC-Q101 J-STD-020D MIL-STD-202, DS31650 N3031LS

    N3030L

    Abstract: No abstract text available
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18m @ VGS = 10V • 30m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030L

    Untitled

    Abstract: No abstract text available
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261

    N3030LS

    Abstract: DS3126-1 DS31261
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020D DS31261 N3030LS DS3126-1

    n3030ls

    Abstract: DMN3030LSS n3030
    Text: DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 18mΩ @ VGS = 10V • 30mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3030LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31261 n3030ls DMN3030LSS n3030

    ALC271X

    Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
    Text: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date


    Original     		PDF LA-6901P ALC271X alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 RTM890N-631-VB-GRT

    SBR20Q100CTP

    Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
    Text: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF DMC3018LSD-13 DMG4932LSD-13 DMN3031LSS-13 DMN3033LSD-13 DMP3056LDM-7 DMP3056LSS-13 DMC3021LK4-13 DMN3030LSS-13 DMN3033LDM-7 DMN3033LSN-7 SBR20Q100CTP DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    DMN62D4SDW-7

    Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
    Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,


    Original     		PDF Rev01 OT-23, OT223, OT-323, OT-363, SSOT-23, OD-323 PCN-2061 PCN-2070. OD-323 DMN62D4SDW-7 ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    SBR2U30P1

    Abstract: SBR02U100LP-7 DMS2120LFWB SBR1U150SA SBR20100CT SBR10100CTB
    Text: PRODUCT CHANGE NOTICE Initial DCS/PCN-1144 Rev 00 Final Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: August 6, 2009 November 4, 2009 Discrete Semiconductors Additional Wafer Fab Sources PCN #:1144 REV 00 FINAL TITLE Qualification of additional wafer fabrication sources


    Original     		PDF DCS/PCN-1144 source50CT SBR30A50CTFP SBR30A60CT SBR30A60CTB-13 SBR30A60CTFP SBR30M100CT SBR30M100CTFP SBR30M120CT SBR30S30CT SBR2U30P1 SBR02U100LP-7 DMS2120LFWB SBR1U150SA SBR20100CT SBR10100CTB

    Untitled

    Abstract: No abstract text available
    Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original     		PDF GBJ2508 DDTB123EKâ DDTB123ECâ DDTD123TKâ DDTD123TCâ GBPC2510* GBJ2510 DDTB123TKâ DDTB123TCâ DDTD123YKâ

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA