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    DMP1096UCB4 Price and Stock

    Diodes Incorporated DMP1096UCB4-7

    MOSFET P-CH 12V 2.6A U-WLB1010-4
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    Avnet Silica DMP1096UCB4-7 3,000
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    DMP1096UCB4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMP1096UCB4 Diodes P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMP1096UCB4-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 2.6A 4-UFCSP Original PDF

    DMP1096UCB4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    e 102m 3kV

    Abstract: No abstract text available
    Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		DMP1096UCB4 AEC-Q101 U-WLB1010-4 DS31954 e 102m 3kV PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height


    Original     		DMP1096UCB4 AEC-Q101 WL-CSP1010H6-nd DS31954 PDF

    WL-CSP1010H6-4

    Abstract: No abstract text available
    Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMP1096UCB4 AEC-Q101 DS31954 WL-CSP1010H6-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMP1096UCB4 DS31954 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF