Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114Y DRC2114Y in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRC4114Y
DRA4114Y
DRC2114Y
DRC4114Y0A
pla202
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRA4114Y
DRC4114Y
DRA2114Y
DRA4114Y0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y (Tentative) Silicon PNP epitaxial planar type For digital circuits • Packaging Package DRA4114Y0A Radial type: 5000 pcs / carton Absolute Maximum Ratings Ta = 25°C Parameter
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2002/95/EC)
DRA4114Y
DRA4114Y0A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114Y DRC2114Y in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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Original
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2002/95/EC)
DRC4114Y
DRA4114Y
DRC2114Y
DRC4114Y0A
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PDF
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drc4114
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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Original
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2002/95/EC)
DRA4114Y
DRC4114Y
DRA2114Y
DRA4114Y0A
drc4114
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DRA4114Y
Abstract: ZJH00452AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y (Tentative) Silicon PNP epitaxial planar type For digital circuits • Packaging Package Radial type: 5000 pcs / carton Absolute Maximum Ratings Ta = 25°C Parameter Code NS-B1-B
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2002/95/EC)
DRA4114Y
DRA4114Y
ZJH00452AED
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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