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    DS2016 Price and Stock

    iComTech Inc EDS-2016-ML

    Unmanaged Ethernet switch with 1
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    DigiKey EDS-2016-ML 1 1
    • 1 $512
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    STAHLIN DS201610W

    20X16X10 FIBERGLASS ENCL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS201610W Bulk 1
    • 1 $635.79
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    Pentair Equipment Protection - Hoffman EKDS20164

    COMPACT ENC SS 2DR W MP
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    DigiKey EKDS20164 Bulk 1
    • 1 $11683.11
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    Maxim Integrated Products DS2016-100

    IC SRAM 16KBIT PARALLEL 24DIP
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    DigiKey DS2016-100 Tube 5,008
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    Maxim Integrated Products DS2016-150

    IC SRAM 16KBIT PARALLEL 24DIP
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    DigiKey DS2016-150 Tube 16
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    DS2016 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS2016 Dallas Semiconductor 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016 Maxim Integrated Products 2K x 8 3V-5V Operation Static RAM Original PDF
    DS2016 Dallas Semiconductor 2K x 8 3V/5V Operation Static RAM Scan PDF
    DS2016-100 Dallas Semiconductor 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016-100 Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016-100 Maxim Integrated Products Original PDF
    DS2016-100+ Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016-100+ Maxim Integrated Products IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 100NS 24 pin PDIP(32.26X13.9X4.45) Original PDF
    DS2016-150 Dallas Semiconductor 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016-150 Dallas Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16KBIT 150NS 24DIP Original PDF
    DS2016-150 Maxim Integrated Products Original PDF
    DS2016-150+ Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016-150+ Maxim Integrated Products IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 150NS 24 pin PDIP(32.26X13.9X4.45) Original PDF
    DS2016R Dallas Semiconductor 2K x 8 3V/5V Operation Static RAM Original PDF
    DS2016R Maxim Integrated Products Original PDF
    DS2016R-100 Dallas Semiconductor SRAM Chip, Asynchronous, 16Kbit, 3.3V|5V Supply, Industrial, SOIC, 24-Pin Original PDF
    DS2016R-100 Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016R-100 Maxim Integrated Products Original PDF
    DS2016R-100+ Maxim Integrated Products 2k x 8 3V/5V Operation Static RAM Original PDF
    DS2016R-100+ Maxim Integrated Products IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 100NS 24SOIC Original PDF

    DS2016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS2016

    Abstract: DS2016R DS2016S SEPTEMBER10
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K


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    PDF I91501 DS2016S DS2016S DS2016S. DS2016 DS2016R. DS2016R SEPTEMBER10

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V


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    PDF DS2016 DS2016 24-pin application15 DS2016S DS2016-100 DS2016-150 DS2016R

    DS2016S

    Abstract: DS2016S-100 DS2016
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: February 28, 1996 Subject: PRODUCT CHANGE NOTICE – B60801 Description: DS2016 200ns to 250ns Change Description of Change: Effective May 1, 1996, the specified 3–volt access time of the DS2016 will change from 200ns to 250ns.


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    PDF B60801 DS2016 200ns 250ns 250ns. 100ns DS2016S DS2016S-100

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V


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    PDF DS2016 DS2016 24-pin DS2016S DS2016-100 DS2016-150 DS2016R

    DS2016

    Abstract: DS2016-100 DS2016-150 DS2016R
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V


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    PDF DS2016 100nA DS2016-100 100ns DS2016-150 150ns 250ns DS2016 DS2016-100 DS2016-150 DS2016R

    DALLAS SEMICONDUCTOR Ds1235

    Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257


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    PDF E71301 DS2016, DS2064, DS2068, DS2257 DS2257. DS1217 DALLAS SEMICONDUCTOR Ds1235 megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY

    DS2016

    Abstract: DS2016S
    Text: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V


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    PDF DS2016 DS2016 DS2016S

    DS2016

    Abstract: DS2016S
    Text: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V


    Original
    PDF DS2016 DS2016 DS2016S

    DS2016

    Abstract: DS2016-100 DS2016R
    Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V


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    PDF DS2016 100nA DS2016-100 100ns 250ns 24-pin DS2016 100pF DS2016-100 DS2016R

    Untitled

    Abstract: No abstract text available
    Text: DS90LT012AH DS90LT012AH High Temperature 3V LVDS Differential Line Receiver Literature Number: SNLS199 DS90LT012AH High Temperature 3V LVDS Differential Line Receiver General Description Features The DS90LT012AH is a single CMOS differential line receiver designed for applications requiring ultra low power


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    PDF DS90LT012AH DS90LT012AH SNLS199

    Untitled

    Abstract: No abstract text available
    Text: LM4846 Output Capacitor-less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4846 is an audio power amplifier capable of delivering 500mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 25mW per channel


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    PDF LM4846 500mW 32-step

    dubilier capacitor

    Abstract: CORNELL DUBILIER CAPACITOR
    Text: LM2717-ADJ Dual Step-Down DC/DC Converter General Description Features The LM2717-ADJ is composed of two PWM DC/DC buck step-down converters. Both converters are used to generate an adjustable output voltage as low as 1.267V. Both also feature low RDSON (0.16Ω) internal switches for maximum


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    PDF LM2717-ADJ 300kHz 600kHz 24-lead dubilier capacitor CORNELL DUBILIER CAPACITOR

    SMPS pcb CIRCUIT diagram

    Abstract: No abstract text available
    Text: LP3879 Micropower 800mA Low Noise "Ceramic Stable" Voltage Regulator for Low Voltage Applications General Description Features The LP3879 is a 800 mA fixed-output voltage regulator designed to provide high performance and low noise in applications requiring output voltages between 1.0V and


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    PDF LP3879 800mA SMPS pcb CIRCUIT diagram

    L4946SQ

    Abstract: No abstract text available
    Text: LM4946 Output Capacitor-Less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4946 is an audio power amplifier capable of delivering 540mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 35mW per channel


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    PDF LM4946Output LM4946 540mW 32-step L4946SQ

    VI05

    Abstract: DS2016 DS2016-100 DS2016S
    Text: DS 2016 DALLAS s e m ic o n d u c to r DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low pow er C M OS design • S tandby current A7 C 1 24 □ VCC A6 C 2 ^ 23 □ A8 A9 - 50 nA m ax at tA = 25°C V Cc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C V Cc = 5.5V


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    PDF DS2016 24-pin DS2016S VI05 DS2016 DS2016-100

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT 50 nA max at tA = 25°C Vc c = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 nA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V • Data Retention Voltage = 5.5V to 2.0V


    OCR Scan
    PDF DS2016 24-pin DS2016S

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current - 50 nA max at tA = 25°C VCc = 3.0V - 100 n A m a x at tA = 25°C V GG = 5.5V - 1 |uA max at tA = 60°C Vc c = 5.5V


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    PDF DS2016 DS2016 100ns 150ns 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS2016. DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A7 • Standby current A6 C 1 C 2 ASH 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at t* = 25°C Vcc = 5.5V 1 jA max at t* = 60°C Vcc = 5.5V


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    PDF DS2016. DS2016S DS2016, 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 nA max at tA = 60°C V cc = 5.5V • Full operation for V cc = 5.5V to 2.7V


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    PDF DS2016 DS2016 DS2016S 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2016 2 k x 8 3 V/5V Operation Static RAM PIN ASSIGNMENT FEATURES • Low-power CMOS design ■ Standby current - 50 nA max at îa = 25°C Vcc = 3.0V - 100 nA max at îa = 25°C V c c = 5.5V - 1 |^A max at tA = 60°C VCc = 5.5V ■ Full operation for V Cc = 5.5V to 2.7V


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    PDF DS2016 DS2016 24-pin DS2016S

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current A7 C 1 24 □ VCC A6 E 2 23 □ A8 A9 - 50 nA m ax at tA = 25°C VCc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C VCc = 5.5V


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    PDF DS2016 DS2016S 24-PIN 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C Vcc = 3.0V 100 nAmaxat tA = 25°C VCc = 5.5V 1 mA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V


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    PDF DS2016 tbl4130 DS2016S 24-PIN 24-PIN 1413D

    Untitled

    Abstract: No abstract text available
    Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current A7 G 1 24 J A6G 2 23 □ AS 3 22 □ A9 WE v cc - 50 nA max at tA = 25°C V cc = 3.0V - 100 nA max at tA = 25°C VCc = 5.5V


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    PDF DS2016 DS2016 DS2016S 24-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS2016, DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current 50 nA max at tA = 25°C VCc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 |iA max at tA = 60°C Vcc = 5.5V


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    PDF DS2016, DS2016S DS2016S applicat62 DS2016. 24-PIN