Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DS591 Search Results

    SF Impression Pixel

    DS591 Price and Stock

    Microchip Technology Inc CDS5919CUR-1/TR

    Zener Diodes Voltage Regulator
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDS5919CUR-1/TR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    DS591 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DFM600XXM45-F000

    Abstract: DS5915-1
    Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating


    Original     		PDF DFM600XXM45-F000 DS5915-1 LN25309) DFM600XXM45-F000

    DFM400NXM33-F000

    Abstract: 3300V FRD
    Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating


    Original     		PDF DFM400NXM33-F000 DS5910-1 LN25214) DFM400NXM33-F000 3300V FRD

    Untitled

    Abstract: No abstract text available
    Text: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DFM1200EXM18-A000 DS5913-1 DS5913-2 LN28313) DFM1200EXM18-A000

    DFM1200NXM33-F000

    Abstract: DFM1200NXM33-F
    Text: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM1200NXM33-F000 DS5912-1 DS5912-2 LN27788) DFM1200NXM33-F000 DFM1200NXM33-F

    DFM1200NXM33-F000

    Abstract: 100FITS
    Text: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating


    Original     		PDF DFM1200NXM33-F000 DS5912-1 LN25215) DFM1200NXM33-F000 100FITS

    Untitled

    Abstract: No abstract text available
    Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.0 April 2007 LN25279 KEY PARAMETERS FEATURES • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in


    Original     		PDF DG808BC45 DS5914-1 LN25279)

    DG808BC45

    Abstract: DG808BC
    Text: DG808BC45 Gate Turn-off Thyristor DS5914-2 July 2014 LN31731 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs


    Original     		PDF DG808BC45 DS5914-2 LN31731) 000V/Â DG808BC45 DG808BC

    DIM300XCM45-F000

    Abstract: No abstract text available
    Text: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A


    Original     		PDF DIM300XCM45-F000 DS5918- LN26586) DIM300XCM45-F000

    DIM300XCM45-F000

    Abstract: AAAD LN25740
    Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.1 November 2007 LN25740 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A


    Original     		PDF DIM300XCM45-F000 DS5918 LN25740) DIM300XCM45-F000 AAAD LN25740

    COMP R

    Abstract: No abstract text available
    Text: OPB Universal Serial Bus 2.0 Device v1.00a DS591 May 10, 2007 Product Specification Introduction LogiCORE Facts The Xilinx Universal Serial Bus 2.0 High Speed Device with On-chip Peripheral Bus (OPB) enables USB connectivity to the user’s design with a minimal amount


    Original     		PDF DS591 COMP R

    TGS 825

    Abstract: gate turn-off Gate Turn-Off Thyristors A780A DG808BC DG808BC45 360Kn
    Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs


    Original     		PDF DG808BC45 DS5914-1 LN26575) TGS 825 gate turn-off Gate Turn-Off Thyristors A780A DG808BC DG808BC45 360Kn

    DFM400NXM33-F000

    Abstract: DFM400NXM33-F
    Text: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM400NXM33-F000 DS5910-1 DS5910-2 LN27786) DFM400NXM33-F000 DFM400NXM33-F

    DIM300XCM45-F000

    Abstract: 8888a
    Text: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 LN25834 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A


    Original     		PDF DIM300XCM45-F000 DS5918 LN25834) DIM300XCM45-F000 8888a

    DFM1200EXM18-A000

    Abstract: No abstract text available
    Text: DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-1.0 April 2007 LN25255 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate • Triple Diodes Can be paralleled for 3600A


    Original     		PDF DFM1200EXM18-A000 DS5913-1 LN25255) DFM1200EXM18-A000

    Untitled

    Abstract: No abstract text available
    Text: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs


    Original     		PDF DG808BC45 DS5914-1 LN26575) 000V/Â

    Untitled

    Abstract: No abstract text available
    Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-F000 DS5911-1 DS5911-2 LN27787)

    Untitled

    Abstract: No abstract text available
    Text: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM1200NXM33-F000 DS5912-1 DS5912-2 LN27788)

    DFM800NXM33-F000

    Abstract: DFM800NXM33-F
    Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-F000 DS5911-1 DS5911-2 LN27787) DFM800NXM33-F000 DFM800NXM33-F

    DFM1200EXM18-A000

    Abstract: DFM1200EXM18-A
    Text: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DFM1200EXM18-A000 DS5913-1 DS5913-2 LN28313) DFM1200EXM18-A000 DFM1200EXM18-A

    DFM800NXM33-F000

    Abstract: No abstract text available
    Text: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating


    Original     		PDF DFM800NXM33-F000 DS5911-1 LN25213) DFM800NXM33-F000

    Untitled

    Abstract: No abstract text available
    Text: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM400NXM33-F000 DS5910-1 DS5910-2 LN27786)

    DFM600XXM45-F000

    Abstract: No abstract text available
    Text: DFM600XXM45-F000 Fast Recovery Diode Module Replaces DS5915-1.0 DS5915-2 December 2010 LN27892 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM600XXM45-F000 DS5915-1 DS5915-2 LN27892) DFM600XXM45-F000

    EVB-USB3300-XLX

    Abstract: ML401 microblaze UG082 XAPP997 usb PHY "Hot Plug and Play" x997
    Text: Application Note: Embedded Processing R XAPP997 v1.0 May 15, 2007 Summary Reference Design: LogiCore OPB USB 2.0 Device Author: Geraldine Andrews, Vidhumouli Hunsigida The application note demonstrates the use of the On-Chip Peripheral Bus (OPB) Universal


    Original     		PDF XAPP997 ML401 UG082, ML40x DS591, EVB-USB3300-XLX ML401 microblaze UG082 XAPP997 usb PHY "Hot Plug and Play" x997

    SF-31N

    Abstract: 16 SOT-143 MOTOROLA C 318B MRF9011 MRF9011L SF-11N FXR SF-31N transistor d 1556 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ microlab slug tuner SF
    Text: Order this data sheet by MRF9011/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF9011 MRF9011L The RF Line N P N S ilic o n H igh-Frequency T ra n sisto r . . . designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.


    OCR Scan     		PDF OT-143 MRF9011) MRF9011L) MRF9011/D MRF9011 MRF9011L SF-31N 16 SOT-143 MOTOROLA C 318B MRF9011 MRF9011L SF-11N FXR SF-31N transistor d 1556 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ microlab slug tuner SF