DSC5G03
Abstract: DSC2G03
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC5G03 Silicon NPN epitaxial planar type For high-frequency amplification DSC2G03 in SMini3 type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC5G03
DSC2G03
DSC5G03
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Untitled
Abstract: No abstract text available
Text: DSC2G03 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C6 Packaging DSC2G03x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
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DSC2G03
UL-94
DSC2G03Ã
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Untitled
Abstract: No abstract text available
Text: DSC5G03 Silicon NPN epitaxial planar type For high-frequency amplification DSC2G03 in SMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C6
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DSC5G03
DSC2G03
UL-94
DSC5G03Ã
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Abstract: No abstract text available
Text: DMS935E1 Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) For CCD output circuits DSC2G03 + CCD load device (Individual) Unit: mm • Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT
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DMS935E1
DSC2G03
UL-94
DMS935E10R
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DSC2G03
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC2G03 Silicon NPN epitaxial planar type For high-frequency amplification • Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT
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2002/95/EC)
DSC2G03
DSC2G03
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Abstract: No abstract text available
Text: DMS935E2 Silicon NPN epitaxial planar type Tr Silicon epitaxial planar type (CCD load device) For CCD output circuits DSC2G03 + CCD load device (Individual) Unit: mm • Features Two elements incorporated into one package (Tr + CCD load device) High transition frequency fT
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DMS935E2
DSC2G03
UL-94
DMS935E20R
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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DMS935E1
Abstract: DSC2G03 marking ccd panasonic device marking examples
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device)
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2002/95/EC)
DMS935E1
DSC2G03
DMS935E1
DSC2G03
marking ccd
panasonic device marking examples
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DMC904F1
Abstract: DSC2001 DSC2G03
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMC904F1 Silicon NPN epitaxial planar type For high frequency amplification • Features Package Basic Part Number Code SSMini6-F3-B Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
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DMC904F1
DSC2G03
DSC2001
DMC904F1
DSC2001
DSC2G03
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device)
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2002/95/EC)
DMS935E1
DSC2G03
DMS935E10R
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMC904F1 Silicon NPN epitaxial planar type For high frequency amplification • Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT
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2002/95/EC)
DMC904F1
DSC2G03
DSC2001
DMC904F10R
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MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.
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A000021E
MN864779
MN88472
AN12947a
MN6627553
MIP3E3SMY
AN22004A
mip2E2dmy
MIP2F2* replacement
MIP2E7DMY
MIP3E50MY
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DMS935E2
Abstract: DSC2G03
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device)
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2002/95/EC)
DMS935E2
DSC2G03
DMS935E2
DSC2G03
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dms935e2
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E2 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package Two elements incorporated into one package (Tr + CCD load device)
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2002/95/EC)
DMS935E2
DSC2G03
DMS935E20R
dms935e2
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DMS935E1
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMS935E1 Silicon NPN epitaxial planar type (Tr) Silicon epitaxial planar type (CCD load device) For CCD output circuits • Features Package High transition frequency fT Contributes to miniaturization of sets, reduction of component count.
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2002/95/EC)
DMS935E1
DSC2G03
DMS935E1
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