101490
Abstract: datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories
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IDT10490
IDT100490
IDT101490
IDT10490,
IDT100490
IDT101490
536-bit
ECL-10K
ECL-100K
ECL-101K
101490
datasheet for 64K RAM
ECL-10K
SO24-4
1 bit sram
DSC8001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM101510 Product Preview 1 Megabit Static Random Access Memories with ECL i/O ECL101K Levels ECL 100K @ - 5.2 V Are Required T h e M C M 1 0 1 5 1 0 is a 1 ,0 4 8 ,5 7 6 bit static random access m em ory organized as
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MCM101510
ECL101K
MCM101510-10
MCM101510-12
MCM101510FG10
MCM101510FG12
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100A484
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access
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IDT10A484
IDT100A484
IDT101A484
IDT10A484,
IDT1OOA484
IDT101A484
384bit
IDT100A484,
100A484
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conventional bicmos
Abstract: No abstract text available
Text: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization
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2S771
IDT10A474
IDT100A474
IDT101A474
1024-words
096-bit
IDT10A474,
T100A474,
IDT101A474
10A474
conventional bicmos
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101490
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCEMOS ECL static random access memo
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IDT10490
IDT100490
IDT101490
536-words
IDT10490,
IDT101490
536-bit
IDT100490,
101490
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Untitled
Abstract: No abstract text available
Text: integ rated Device Technology, Inc. PRELIMINARY IDT10496LL IDT100496LL IDT101496LL SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs
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IDT10496LL
IDT100496LL
IDT101496LL
384-words
13/15ns
IDT10496LL,
IDT101496LL
536-bit
2768drw11
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100A484
Abstract: 101A48 IDT10484 ECL-10K IDT100A4M 4Kx4 SRAM
Text: r — I N T E G R A T E D DE VICE 3ÔE D • 4 Ô 2 S771 D Ü 0 b071 4 DÉ IDT 3 > '0 < Z HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A434 IDT101A484 FEATURES; DESCRIPTION: • • ■ • • • • • The IDT10A484,1DT100A484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access
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2S771
0b071
IDT10A484
IDT100A484
IDT101A484
4096-words
700mW
1DT100A484
IDT101A484
100A484
101A48
IDT10484
ECL-10K
IDT100A4M
4Kx4 SRAM
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology» Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT SRAM iotÎÎSÎm IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit high-speed BiCEMOS ECL static random access memo
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IDT101494
IDT10494,
IDT100494
536-bit
IDT100494,
ECL-100K
ECL-101K
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8002 1035
Abstract: IHb si DSC-8002 2764-2 27b4 ECL-10K IDT100494 IDT101494 IDT10494 ecl 10K sram 16 bit
Text: Data Book B, Section 5.4, Page 1 IDT10/100/101494 In te g ra te d D evice T echnology, In c. HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM IDT10494 IDT100494 IDT101494 FEATURES: DESCRIPTION: • • • • • • • The IDT10494, IDT100494 and 101494 are 65,536-bit
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IDT10/100/101494
IDT10494
IDT100494
IDT101494
384-words
700mW
IDT10494,
536-bit
11V1U
8002 1035
IHb si
DSC-8002
2764-2
27b4
ECL-10K
IDT101494
ecl 10K sram 16 bit
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l00a
Abstract: ECL-10K
Text: In tegrated D e v ice T ech n o lo gy, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • • • • • • • • The ID T 10A 474, ID T 1 0 0 A 4 7 4 and 1 0 1A 474 are 4,096-bit
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IDT10A474
IDT100A474
IDT101A474
1024-words
600mW
IDT10A474,
101A474
096-bit
l00a
ECL-10K
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • The IDT10474, IDT100474 and 101474 are 4,096-bit high speed BiCEMOS ECL static random access memories
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IDT10474
IDT100474
IDT101474
1024-words
IDT10474,
096-bit
IDT100474,
IDT101474
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization • Address access time: 5/7/8/10/15 ns • Low power dissipation: 600mW (typ.)
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IDT10A474
IDT100A474
IDT101A474
1024-words
600mW
IDT10A474,
101A474
096-bit
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100A484
Abstract: 100484 Z623 I60S4 10A484
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
IDT10484
100A484
100484
Z623
I60S4
10A484
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DSC40
Abstract: No abstract text available
Text: I N T E G R A T E » D E VI CE 3ÛE D • M Ö 2 S 77 1 D D O b G b E _ HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM 3 Bi IDT ~t - 4 G ~ £ 2 , - 0 3 PRELIMINARY IDT10484 IDT100484 IDT101484 FEATURES: DESCRIPTION: • • • ■ ■
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2S771
IDT10484
IDT100484
IDT101484
4096-words
700mW
IDT10484,
IDT100484and
384-bit
DSC40
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ecl100
Abstract: No abstract text available
Text: SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K X 4-BIT STRAM IDT10506RL IDT100506RL IDT101506RL Technology, Inc. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 12/i5ns
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IDT10506RL
IDT100506RL
IDT101506RL
536-words
12/i5ns
800mW
IDT10506RL,
IDT101506RL
144-bit
ecl100
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TAA 840
Abstract: No abstract text available
Text: gggffi'N. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM |jd £ / Integrated Device Technology, Inc. PRELIMINARY IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns
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IDT10480
IDT100480
IDT101480
1000mW
IDT10480,
IDT101480are
384-bit
ECL-10K
ECL-100K
TAA 840
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16Kx 1-BIT SRAM IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • • • • • • • The IDT10480, IDT100480 and IDT101480 are 16,384-bit high-speed BiCEMOS ECL static random access memo
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IDT10480
IDT100480
IDT101480
384-words
IDT10480,
IDT101480
384-bit
IDT100480,
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, lac. SELF-TIMED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT STRAM FEATURES: • 16,384-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs • Balanced Read/Write cycle time: 13/15ns • Access time: 10/12 ns (max.)
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IDT10496LL
IDT100496LL
IDT101496LL
384-words
13/15ns
IDT10496LL,
IDT101496LL
536-bit
ECL-100K
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MA 2810
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM FEATURES: • • • • • • • • 32,768-words x 9-bit organization Address access time: 8/10/12/15 Wide word for reduced address loading Guaranteed Output Hold time
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IDT100509D
IDT101509D
768-words
IDT10509D,
IDT101509D
912-bit
32Kx9,
IDT10S09,
IDT100509D,
MA 2810
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se 130 n
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT SRAM IDT10504 IDT100504 IDT101504 Integrated Device Technology, Inc. FEATURES: • • • • • • • • 65,536-words x 4-bit organization Address access time: 7/8/10/12/15 ns Low power dissipation: 1000m W (typ.)
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IDT10504
IDT100504
IDT101504
536-words
1000mW
IDT10504,
144-bit
64Kx4,
se 130 n
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101490
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrateti D evice Technology, In c. FEATURES: • • • • • • • 65,536-words x 1 -bit organization Address access tim e: 8/10/12/15 Low power dissipation: 420m W (typ.)
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IDT10490
IDT100490
IDT101490
536-words
420mW
IDT10490,
536-bit
191V1
101490
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • T h e ID T 1 047 4, ID T 10 0 4 7 4 and 1 0 1 4 7 4 are 4,096-bit high
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IDT10474
IDT100474
IDT101474
096-bit
IDT10474,
IDT100474,
L-100K
-101K
I-B-66
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION IDT10498 IDT100498 IDT101498 HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT with CONDITIONAL WRITE FEATURES: • • • • • ■ ■ 16,384-words x 4 -b il organization Address access time: 12/15ns Read Data output latch lor extended hold time
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384-words
12/15ns
IDT10498
IDT100498
IDT101498
ThelDT10498,
IDT100498and
IDT101498are
536-bit
IDT10498,
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IHb si
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time
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535-words
IDT10507
IDT100507
IDT101507
IDT10507,
IDT101507
144bit
ECL-100K
IHb si
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