Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM3DK512A •General description ■Features ELM3DK512A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Vds=30V Id=22A Rds(on) < 2.8mΩ (Vgs=10V)
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Original
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ELM3DK512A
ELM3DK512A-S
100ms
Feb-23-2012
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PDF
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM3DK512A-S •General description ■Features ELM3DK512A-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=22A Rds(on) < 2.8mΩ (Vgs=10V) Rds(on) < 3.6mΩ (Vgs=4.5V)
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Original
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ELM3DK512A-S
ELM3DK512A-S
100ms
Feb-23-2012
|
PDF
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