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    3LN03S

    Abstract: marking YG
    Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


    Original     		PDF 3LN03S ENA0011 PW10s, A0011-4/4 3LN03S marking YG

    marking YG

    Abstract: 3LN03S
    Text: 3LN03S Ordering number : ENA0011 N-Channel Silicon MOSFET 3LN03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].


    Original     		PDF 3LN03S ENA0011 A0011-4/4 marking YG 3LN03S