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    transistor zo 607

    Abstract: zo 607 MA zo 607 EC3H02C
    Text: Ordering number : ENN6579 EC3H02C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low noise : NF=1.0dB typ f=1GHz . High gain :S21e2=12dB typ (f=1GHz).


    Original     		ENN6579 EC3H02C S21e2 transistor zo 607 zo 607 MA zo 607 EC3H02C PDF

    transistor zo 607

    Abstract: zo 607 MA zo 607 equivalent ZO 607 EC3H02C
    Text: Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications [EC3H02C] 0.5 0.2 0.05 0.2 3 4 2 1 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.6 Bottom View 1.0 0.05 •


    Original     		ENN6579 EC3H02C EC3H02C] S21e2 E-CSP1008-4 transistor zo 607 zo 607 MA zo 607 equivalent ZO 607 EC3H02C PDF

    7m 0880 IC

    Abstract: No abstract text available
    Text: Ordering number : ENN6579 NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions Features • Low noise : NF=1.0dB typ f= lG H z . unit : mm • High gain : |S 2 1 e I2=12dB typ (f= lG H z).


    OCR Scan     		ENN6579 EC3H02C EC3H02C] E-CSP1008-4 7m 0880 IC PDF