EPC2801 Search Results

EPC2801 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPC2801		Efficient Power Conversion	FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 25A BUMPED DIE		Original	PDF

EPC2801 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure	Original	EPC2801	PDF

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Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

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EPC2801

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