ER1001

Abstract: ER1007
Contextual Info: TAIWAN LITO N E L E C T R O N I C • HIE D LITE ? I SEMICO NDUCTO RS m flfl35bRS Q0041AD ■ TLIT ER1001 thru ER1007 F o v ^ VO LTA G E RANGE 50 to 1000 Volts C U R R EN T 1.0 Ampere FEATURES • • Diffused junction • Low leakage • Low forward voltage drop

Contextual Info: LITEM f I SEMICONDUCTORS ER1001 thru ER1007 FEATURES • L o w co st DO-41 • D iffu s e d ju n c tio n • L o w leakage • L o w fo r w a rd vo lta g e d ro p • H igh c u rre n t c a p a b ility • -0 3 4 .86 .0 2 8 (.71) 1.0 (25.4) M IN E a sily cleaned w ith F re o n , A lc o h o l, C h lo ro th e n e and

Contextual Info: LÎTEttül ER1001 thru ER1007 SEMICONDUCTORS i VO LTAG E RANGE 50 to 1000 Volts CURREN T 1 am p . e f f ic ie n t r e c o v e r y r e c t if ie r s 1.0 Ampere Î; FEATURES • DO-41 Low cost T • Diffused junction • Low leakage • Low forward voltage drop

High Efficiency Rectifiers

Contextual Info: LITEM £I HIGH EFFICIENCY RECTIFIERS 1.0 A M P E R E SO VOLTS TO 1000 VOLTS EFFICIENT RECTIFIER V '^ ^ P R V \ j Y P E NO. V 50 100 200 ER1002 ER1003 400 600 8 00 1000 CASE lo I A ) \ E R 1 00 1 ER1004 83 ER1005 ER1006 ER1007 DO-41