Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1005 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended
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F1005
724100e
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F1005
Abstract: 175MHZ
Text: polyfet rf devices F1005 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1005
F1005
175MHZ
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1005 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F1005
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ssc1080
Abstract: TTL74S OL C40 SSC1000 SSC100 SSC1020
Text: S S C I OOOseries CMOS STANDARD CELL •DESCRIPTION The SSC1000 Standard Cell Series consists of 20 basic master chips. A system utilizing up to 12,000 gates can be implemented on a single chip. This family is fabricated using our advanced 1.8 micron duallayer metal CMOS
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SSC1000
SLA6000
TTL74S
ssc1080
OL C40
SSC100
SSC1020
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SSC3020
Abstract: SSC3030 F1841 SSC3110 F605 SSC3010 SSC3120 SSC3150
Text: S S C 3 0 0 0 s e r ie s HIGH SPEED CMOS STANDARD CELL • DESCRIPTION The SSC3000 Series is comprised of the SSC3000 and SSC3500 family of standard cells. Each family is offered in 20 preset gate to I/O combinations. Both the SSC3000 and SSC3500 offer high speed and high drive capability
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SSC3000
SSC3500
SSC3000Serles
SSC3020
SSC3030
F1841
SSC3110
F605
SSC3010
SSC3120
SSC3150
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SLA1024
Abstract: SLA1081 SLA1039 SLA1029
Text: S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS • DESCRIPTION The SLA10000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 10 arrays ranging from 8,000 to 101,800 usable gates
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SLA10000
F80-5
F100-5
F120-8
F128-5
F128-8
F144-8
F160-8
F184-16
SLA1024
SLA1081
SLA1039
SLA1029
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B8228
Abstract: No abstract text available
Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8
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SLA10000
SLA10000
B8228
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Untitled
Abstract: No abstract text available
Text: TL1525AJ Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigUncommited Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0
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TL1525AJ
Code16-143
Pins16
NumberLN01600143
f100-500kHz
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Untitled
Abstract: No abstract text available
Text: TL1527AJ Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigUncommited Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0
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TL1527AJ
Code16-143
Pins16
NumberLN01600143
f100-500kHZ
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Untitled
Abstract: No abstract text available
Text: TL3527AJ Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigUncommited Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0
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TL3527AJ
Code16-143
Pins16
NumberLN01600143
f100-500kHz
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Untitled
Abstract: No abstract text available
Text: TL3527AN Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 400k UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigUncommited Output Transistor Current (A)100m Output Transistor Voltage (V)35 Supply Voltage Minimum (V)8.0
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TL3527AN
Code16-143
Pins16
NumberLN01600143
f100-500kHz
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m7101
Abstract: hp 2140 circuit diagram of motherboard uli m1573 m1573 m1573 a1 AOS3413 schematic diagram lcd tv sharp inverter ATI-RS480M M1573M keyboard and touchpad schematic
Text: SERVICE MANUAL FOR 8317 BY: Sinty Zhang Repair Technology Research Department /EDVD Jun.2005 / R01 8317 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………….
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M1573
U1014
J1014
Q1027
R1219
R1179
R1176
R1195
R1371
R1232
m7101
hp 2140 circuit diagram of motherboard
uli m1573
m1573 a1
AOS3413
schematic diagram lcd tv sharp inverter
ATI-RS480M
M1573M
keyboard and touchpad schematic
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U17792E
Abstract: CC78K0R ID78K0R-QB RA78K0R
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
U17792E
CC78K0R
ID78K0R-QB
RA78K0R
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E1007
Abstract: E4005 stk 403 - 130 green hills compiler v850 C CODE FOR V850E2 E3400 f3055 STK 442 130 V499 W3500
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Current Rating: 0.5A AC,DC Voltage Rating: 50V AC,DC Temperature Range: — 2 5 'C ~ + 8 5 'C C ontact Resistance: 3 0 m 0 Max. Insulation Resistance: 500MQ Min. W ithstanding Voltage: 500V A C/m in ute Pin Material: Phosphor B ron ze/T in -plate d
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500MQ
F1005WVâ
F1005W
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SLA100
Abstract: sla100l g208 SLA600 SLA18
Text: S L A 1 OOLseries CMOS LOW VOLTAGE GATE ARRAY •DESCRIPTION The SLA100L Series is a CMOS master slice, low voltage gate array fabricated using a low threshold process. It includes six models, with a gate capacity range of 1,600 to 8,000 gates. The low voltage design enables this series to operate from a single 1.5V or 3V battery. It is well suited for
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SLA100L
SLA6000
SLA100
g208
SLA600
SLA18
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Untitled
Abstract: No abstract text available
Text: PF108-51 S L A 5 0 0 0 s e r ie s CMOS GATE ARRAY # 3 Micron Dual Layer Metal # 5 Sizes #Fast Design Cycle • DESCRIPTION The SLA5000 series consists of a group of five CMOS gate arrays with gate counts from 413 to 3,082 gates. The series is fabricated utilizing our 3 micron high speed CMOS silicon gate technology to achieve propa
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PF108-51
SLA5000
SLA5120
SLA5210
SLA5300
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S-MOS navnet
Abstract: S-MOS asic B16c F1841
Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel
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SLA9000
SLA9000
S-MOS navnet
S-MOS asic
B16c
F1841
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Untitled
Abstract: No abstract text available
Text: S-N 0 S S Y S T E M S INC Sb E J> • 7 ^ 3 2 ^ 0 “? O Q G l S M b 07T H S M O SSC2000 Series CMO^ LOW VOLTAGE STANDARD CELL • Low Voltage Operation at 0.9 V min. • Built-in Level Shift Circuit • Up to 11,000 gates ■ DESCRIPTION The SSC2000 Series CMOS standard cell, to which low-threshold manufacturing process is applied, enables low
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SSC2000
SSC2000
TTL74
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872S
Abstract: 837s 8b3s aA88
Text: S-M S SYSTEMS INC 31E D • 7^35^0^ 0000=577 b * S M 0 S L A 8 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY ■ DESCRIPTION The SLA8000 Series is a super-high-speed, densely-packaged master slice CMOS gate array sea of gates . The SLA8000 Series comes in seven models, They can accommodate up to 16K usable gates to
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SLA8000
SLA8000Series
872S
837s
8b3s
aA88
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TE 2482
Abstract: sla7-1 708B
Text: S L A 7 0 0 B s e rie s CMOS HIGH SPEED & HIGH OUTPUT GATE ARRAY • d e s c r ip tio n The SLA700B Series is a multi-pin, high output CMOS gate array, an enhanced version of the SLA7000 Series. The series is fabricated using our advanced 1.5 micron CMOS technology and can deliver
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SLA700B
SLA7000
SLA700BSeries
SLA700BSerles
TE 2482
sla7-1
708B
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sla7800
Abstract: TTL 7490 7905 TL 7490 SLA7000 F44-6 SLA7160 SLA7220 SLA7340 SLA7490
Text: S L A 7 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY •DESCRIPTION The SLA7000 Series consists of a group of 6 CMOS gate arrays with gate counts from 1,632 to 16,250 gates. The series is fabricated utilizing our 1.5 micron high speed CMOS silicon gate technology to achieve
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SLA7000series
SLA7000
sla7000sÂ
sla7800
TTL 7490
7905
TL 7490
F44-6
SLA7160
SLA7220
SLA7340
SLA7490
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sci 2160-013
Abstract: SCI-2360-002 62-PM 54-310-011 D38999/44
Text: S p e c tru m p a rt # 51-311-319 51-311-320 51-311-321 51-311-322 51-311-327 51-311-340 51-311-346 51-311-347 51-311-348 51-311-354 51-311-355 51-311-356 51-311-357 51-311-358 51-311-359 51-311-360 51-311-404 51-311-405 51-311-406 51-311-407 51-311-406 51-311-409
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60-XX
X-010-5-4
60-XXX-020-3-2
60-XXX-Q20-3-2
60-XXX-020-3-4
sci 2160-013
SCI-2360-002
62-PM
54-310-011
D38999/44
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78f1164
Abstract: 78F0881 78F0511 78F1165 78f0513 78F0511A 78f1826 78f0546 78F0550 70f3378
Text: Functions Supported by CubeSuite This is information about the next version of CubeSuite modules , etc.(2010/4 update) Product/module name Version CubeSuite V1.20 Integrated Development Environme V1.20 Debug Tool Common Interface V1.21 Device Information Common Interfa V2.00
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CA850
CA78K0
CA78K0R
CA850
CA78K0
CA78K0R
78K0R
V850E2M
78f1164
78F0881
78F0511
78F1165
78f0513
78F0511A
78f1826
78f0546
78F0550
70f3378
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