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Catalog Datasheet	MFG & Type	PDF	Document Tags
F-1303 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed metal-ceramic	OCR Scan	PDF	F1303Bj F-1303

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F-1303

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed metal-ceramic

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F1303Bj F-1303