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    MGF2445A

    Abstract: Scans-0065801 n-channel 4336
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs The M G F2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pliĀ­ fiers. 2 - 01.6 FEATURES


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    PDF MGF2445A 32dBm 12GHz may250 450mA MGF2445A Scans-0065801 n-channel 4336