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    f4316

    Abstract: F4319F MGF4319F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		F4310F F4316F F4319F f4316 F4319F MGF4319F PDF

    MGF4316F

    Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The F4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGF4310F 12GHz MGF4319F: MGF4316F: M5M27C102P RV-15 1048576-BIT 65536-W0RD MGF4316F MGF4319F MGF4310 MGF4319 251C PDF

    MGF4916F

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		MGF4910F F4310F 4910F MGF4916F PDF