Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC F7124A 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION M G F7124A is a m onolithic m icrowave integrated circuit for use in 1 ,9GHz band power amplifiers. FEATURES • High output power Po=26dBm,7i/4DQPSK • Small size 5 .8 x12 .2 x1 ,8mm
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MGF7124A
F7124A
26dBm
600kHz)
900kHz)
26dBm
600kHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs MMIC F7124A 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION M G F7124A is a m onolithic m icrowave integrated circuit for use in 1.9GHz band pow er amplifiers. FEATURES • High output power Po=26dBm,7t/4DQPSK • Small size 5.8 x12 .2 x1 ,8mm
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MGF7124A
F7124A
26dBm
26dBm
600kHz,
900kHz,
600kHz)
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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f7108
Abstract: FA01317 F7132P F7122
Text: • GaAs FET MODULE FOR HANDY PHONE Max. ratings Application Type No. Po min Va (V) v« (V) h (A) mm max min max (V) Vn (V) f(M H ï) % Stad P in Hanw (max) (min) (dB) ( - ) VT TciOP) CC) (min) Pin (dBm) (dBm) (% ) FAQ13I4 1 7 1 0 - 1785MHz,32.5dBm Power AMP. PCN
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FAQ13I4
FA01317
FA013I9A
FA012I5
FA01216
FA012I9
FA01220
1785MHz
1453MHz
1890to
f7108
F7132P
F7122
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