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    FB180SA10P Search Results

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    FB180SA10P Price and Stock

    Vishay Semiconductors VS-FB180SA10P

    MOSFET N-CH 100V 180A SOT-227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VS-FB180SA10P Bulk 160
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    • 1000 $23.114
    • 10000 $23.114
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    Vishay Intertechnologies FB180SA10P

    N Channel Mosfet, 100V, 180A, Sot-227; Channel Type:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:480W; Product Range:- Rohs Compliant: Yes |Vishay FB180SA10P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark FB180SA10P Bulk 160
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    FB180SA10P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    FB180SA10P

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 11-Mar-11 FB180SA10P

    Untitled

    Abstract: No abstract text available
    Text: Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements


    Original     		PDF VS-FB190SA10 FB180SA10P OT-227 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    fb180sa10p

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 18-Jul-08 fb180sa10p

    fb180sa10p

    Abstract: No abstract text available
    Text: FB180SA10P Vishay High Power Products Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 18-Jul-08 fb180sa10p

    FB180SA10P

    Abstract: No abstract text available
    Text: FB180SA10P Vishay High Power Products HEXFET Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Very low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements


    Original     		PDF FB180SA10P OT-227 OT-227 FB180SA10P

    Untitled

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: FB180SA10P Vishay High Power Products HEXFET Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Very low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements


    Original     		PDF FB180SA10P OT-227 OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    FB180SA10P

    Abstract: No abstract text available
    Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		PDF FB180SA10P OT-227 2002/95/EC OT-227 11-Mar-11 FB180SA10P

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter