Untitled
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
FB180SA10P
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
11-Mar-11
FB180SA10P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements
|
Original
|
VS-FB190SA10
FB180SA10P
OT-227
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
fb180sa10p
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
18-Jul-08
fb180sa10p
|
PDF
|
fb180sa10p
Abstract: No abstract text available
Text: FB180SA10P Vishay High Power Products Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
18-Jul-08
fb180sa10p
|
PDF
|
FB180SA10P
Abstract: No abstract text available
Text: FB180SA10P Vishay High Power Products HEXFET Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Very low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements
|
Original
|
FB180SA10P
OT-227
OT-227
FB180SA10P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FB180SA10P Vishay High Power Products HEXFET Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Very low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements
|
Original
|
FB180SA10P
OT-227
OT-227
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
FB180SA10P
Abstract: No abstract text available
Text: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FB180SA10P
OT-227
2002/95/EC
OT-227
11-Mar-11
FB180SA10P
|
PDF
|
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
|
Original
|
GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
|
PDF
|
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
|
PDF
|
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
|
Original
|
100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
|
PDF
|