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    FCA76N60N Price and Stock

    onsemi FCA76N60N

    MOSFET N-CH 600V 76A TO3PN
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    DigiKey FCA76N60N Tube 1,348 1
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    Fairchild Semiconductor Corporation FCA76N60N

    76 A, 600 V, 0.036 OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components FCA76N60N 63
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    Rochester Electronics FCA76N60N 92 1
    • 1 $14.59
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    FCA76N60N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCA76N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-3PN Original PDF

    FCA76N60N Datasheets Context Search

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    FCA76N60N

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology


    Original     		FCA76N60N FCA76N60N SJ 76 A DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)


    Original     		FCA76N60N PDF

    SJ 76 A DIODE datasheet

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 218 nC)


    Original     		FCA76N60N SJ 76 A DIODE datasheet SJ 76 A DIODE PDF

    FCA76N60N

    Abstract: FCA76N60 613 MOSFET
    Text: SupreMOSTM FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 218nC)


    Original     		FCA76N60N 218nC) FCA76N60N FCA76N60 613 MOSFET PDF