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    onsemi FDB016N04AL7

    MOSFET N-CH 40V 160A TO263-7
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    DigiKey FDB016N04AL7 Reel 800 800
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    FDB016N04AL7 Digi-Reel 800 1
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    FDB016N04AL7 Cut Tape 800 1
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    Avnet Americas FDB016N04AL7 Reel 0 Weeks, 2 Days 325
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    Flip Electronics FDB016N04AL7 3,915
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    Fairchild Semiconductor Corporation FDB016N04AL7

    40 V, 306 A, 1.6 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA FDB016N04AL7 800
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    FDB016N04AL7 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB016N04AL7 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A D2PAK-7 Original PDF

    FDB016N04AL7 Datasheets Context Search

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    Abstract: No abstract text available
    Text: FDB016N04AL7 N-Channel PowerTrench MOSFET 40 V, 306 A, 1.6 mW Features Description • RDS on = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDB016N04AL7 PDF

    FDB016N04AL7

    Abstract: marking 47W FDB016N04A
    Text: FDB016N04AL7 N-Channel PowerTrench MOSFET 40V, 306A, 1.6mW Features Description • RDS on = 1.16mW ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


    Original     		FDB016N04AL7 FDB016N04AL7 marking 47W FDB016N04A PDF