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    FDB035N10A Search Results

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    FDB035N10A Price and Stock

    onsemi FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    Mouser Electronics FDB035N10A 28,899
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    Newark FDB035N10A Cut Tape 95 1
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    FDB035N10A Reel 800
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    Onlinecomponents.com FDB035N10A
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    Richardson RFPD FDB035N10A 800
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    Avnet Asia FDB035N10A 22 Weeks 800
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    FDB035N10A Cut Tape 710
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    EBV Elektronik FDB035N10A 24 Weeks 800
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    Fairchild Semiconductor Corporation FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    Win Source Electronics FDB035N10A 34,066
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    • 100 $5.433
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    FDB035N10A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB035N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A D2PAK Original PDF

    FDB035N10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    solar charge circuit max 856

    Abstract: FDB035N10A
    Text: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB035N10A FDB035N10A solar charge circuit max 856

    TO254P1524X482-3N

    Abstract: No abstract text available
    Text: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB035N10A FDB035N10A TO254P1524X482-3N

    Untitled

    Abstract: No abstract text available
    Text: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB035N10A FDB035N10A

    Untitled

    Abstract: No abstract text available
    Text: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDB035N10A

    dual diode marking A3

    Abstract: No abstract text available
    Text: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB035N10A FDB035N10A dual diode marking A3