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    Rochester Electronics LLC FDC608PZ-F171

    FDC608PZ - P-CHANNEL POWERTRENCH
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    DigiKey FDC608PZ-F171 Bulk 510,149 1,158
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    Flip Electronics FDC608PZ-F171

    -20V P-CHANNEL 2.5V POWERTRENCH
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    DigiKey FDC608PZ-F171 Reel 345,222 2,500
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    onsemi FDC604P

    MOSFET P-CH 20V 5.5A SUPERSOT6
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    DigiKey FDC604P Reel 15,000 3,000
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    Avnet Americas FDC604P Reel 6,000 10 Weeks 3,000
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    New Advantage Corporation FDC604P 177,000 1
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    onsemi FDC608PZ

    MOSFET P-CH 20V 5.8A SUPERSOT6
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    DigiKey FDC608PZ Reel 12,000 3,000
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    FDC608PZ Cut Tape 710 1
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    FDC608PZ Reel 11 Weeks 6,000
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    Mouser Electronics FDC608PZ 186,734
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    Onlinecomponents.com FDC608PZ 6,000
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    Rochester Electronics FDC608PZ 1,233 1
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    TME FDC608PZ 3,020 1
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    Richardson RFPD FDC608PZ 6,000
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    Master Electronics FDC608PZ 6,000
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    onsemi FDC602P

    MOSFET P-CH 20V 5.5A SUPERSOT6
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    DigiKey FDC602P Reel 7,090 3,000
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    FDC602P Cut Tape 942 1
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    FDC60 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC60 Astrodyne Isolated and Regulated 60 WATT Modular DC/DC Converters Original PDF
    FDC6000NZ Fairchild Semiconductor Dual N-Channel 2.5 V Specified PowerTrench MOSFET Original PDF
    FDC6000NZ Fairchild Semiconductor Dual N-channel 2.5V specified PowerTrench MOSFET. Original PDF
    FDC6000NZ_F077 Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Recommend FDC6000NZ_F077 Original PDF
    FDC6000NZ_NL Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Recommend FDC6000NZ_F077 Original PDF
    FDC60-12D05 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12D05 P-DUKE Input range:9-18 VDCoutput voltage:±5 VDC output current:+10/-2 Ainput current:6500 mA 60 W DC-DC converter Original PDF
    FDC60-12D12 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12D12 P-DUKE Input range:9-18 VDCoutput voltage:±12 VDC output current:±2.5 Ainput current:6250 mA 60 W DC-DC converter Original PDF
    FDC60-12D15 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12D15 P-DUKE Input range:9-18 VDCoutput voltage:±15 VDC output current:±2 Ainput current:6250 mA 60 W DC-DC converter Original PDF
    FDC60-12D3305 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12D3305 P-DUKE Input range:9-18 VDCoutput voltage:3.3/5 VDC output current:6/6 Ainput current:5770 mA 60 W DC-DC converter Original PDF
    FDC60-12S05 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12S05 P-DUKE Input range:9-18 VDCoutput voltage:5 VDC output current:12 Ainput current:6330 mA 60 W DC-DC converter Original PDF
    FDC60-12S12 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12S12 P-DUKE Input range:9-18 VDCoutput voltage:12 VDC output current:5 Ainput current:6250 mA 60 W DC-DC converter Original PDF
    FDC60-12S15 Astrodyne CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converter Original PDF
    FDC60-12S15 P-DUKE Input range:9-18 VDCoutput voltage:15 VDC output current:4 Ainput current:6250 mA 60 W DC-DC converter Original PDF
    FDC60-12S33 Astrodyne Isolated and Regulated 60 WATT Modular DC/DC Converters Original PDF

    FDC60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    608Z

    Abstract: FDC608PZ marking 58a SuperSOT -6
    Text: tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC608PZ 608Z FDC608PZ marking 58a SuperSOT -6

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527

    marking 606

    Abstract: diode marking EY
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P FDC606P NF073 marking 606 diode marking EY

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A


    Original     		PDF KDC6020C FDC6020C) OT-23-6

    SSOT-6

    Abstract: FDC602P CBVK741B019 F63TNR FDC633N
    Text: FDC602P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P SSOT-6 FDC602P CBVK741B019 F63TNR FDC633N

    FDC60

    Abstract: FDC60-12S05 FDC60-12S12 FDC60-12S15 FDC60-12S33 FDC60-24S05 FDC60-24S12 FDC60-24S33 FDC60-48S05 FDC60-48S12
    Text: CostCutter Isolated and Regulated 60 WATT Modular DC/DC Converters FDC60 Series Wide 2 : 1 Input Range High Efficiency Regulated Outputs 1600V Isolation Full EMI Shielding PI Input Filter Unit measures 2.76”W x 3.94”L x 0.75”H MODEL SELECTIONS Output


    Original     		PDF FDC60 FDC60-12S33 FDC60-24S33 FDC60-48S33 FDC60-12S05 FDC60-24S05 FDC60-48S05 FDC60-12S12 FDC60-24S12 FDC60-48S12 FDC60 FDC60-12S05 FDC60-12S12 FDC60-12S15 FDC60-12S33 FDC60-24S05 FDC60-24S12 FDC60-24S33 FDC60-48S05 FDC60-48S12

    FDC60-12S05

    Abstract: FDC60-24D12 FDC60 FDC60-12S12 FDC60-12S15 FDC60-12S33 FDC60-24S05 FDC60-24S12 FDC60-24S33 FDC60-48S05
    Text: FDC60 I s o l a t e d a n d R e gulated 60 WATT Modular DC/DC Converters series Wide 2 : 1 Input Range High Efficiency Regulated Outputs 1600V Isolation Full EMI Shielding PI Input Filter Unit measures 2.76”W x 3.94”L x 0.75”H Model Number SINGLE OUTPUT


    Original     		PDF FDC60 FDC60-12S33 FDC60-24S33 FDC60-48S33 FDC60-12S05 FDC60-24S05 FDC60-48S05 FDC60-12S12 FDC60-24S12 FDC60-48S12 FDC60-12S05 FDC60-24D12 FDC60 FDC60-12S12 FDC60-12S15 FDC60-12S33 FDC60-24S05 FDC60-24S12 FDC60-24S33 FDC60-48S05

    FDC6036P

    Abstract: No abstract text available
    Text: FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS ON and thermal properties of the device are optimized for battery power


    Original     		PDF FDC6036P FDC6036P

    FDC6020C_F077

    Abstract: FDC6020C
    Text: FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		PDF FDC6020C FDC6020C FDC6020C_F077

    N-Channel 2.5V

    Abstract: fdc6000nz
    Text: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDC6000NZ FDC6000NZ N-Channel 2.5V

    A2635

    Abstract: V2500
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P A2635 V2500

    608Z

    Abstract: No abstract text available
    Text: FDC608PZ June 2006 FDC608PZ tm P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC608PZ 608Z

    Untitled

    Abstract: No abstract text available
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P FDC602P

    Untitled

    Abstract: No abstract text available
    Text: FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS ON and thermal properties of the device are optimized for battery power


    Original     		PDF FDC6036P FDC6036P

    FDC6000NZ

    Abstract: c2021
    Text: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDC6000NZ FDC6000NZ c2021

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P CBVK741B019 F63TNR FDC604P FDC633N

    DIODE A6 datasheet

    Abstract: DIODE A6
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		PDF FDC606P DIODE A6 datasheet DIODE A6

    Untitled

    Abstract: No abstract text available
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P

    Untitled

    Abstract: No abstract text available
    Text: FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in Bottomless SSOT-6, the RDS ON and thermal properties of the device are optimized for


    Original     		PDF FDC6036P

    FDC602P

    Abstract: No abstract text available
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P FDC602P

    P-Channel 1.8V MOSFET FLMP

    Abstract: FDC6036P
    Text: FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS ON and thermal properties of the device are optimized for battery power


    Original     		PDF FDC6036P P-Channel 1.8V MOSFET FLMP FDC6036P

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P CBVK741B019 F63TNR FDC604P FDC633N

    Untitled

    Abstract: No abstract text available
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P

    Untitled

    Abstract: No abstract text available
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF FDC604P