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    FDC8601 Price and Stock

    onsemi FDC8601

    MOSFET N-CH 100V 2.7A SUPERSOT6
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    DigiKey FDC8601 Cut Tape 13,040 1
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    FDC8601 Digi-Reel 13,040 1
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    FDC8601 Reel 12,000 3,000
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    Mouser Electronics FDC8601 18,174
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    Newark FDC8601 Cut Tape 3,000
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    FDC8601 Reel 3,000
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    Future Electronics FDC8601 Reel 24 Weeks 3,000
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    Onlinecomponents.com FDC8601
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    Rochester Electronics FDC8601 7,476 1
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    Richardson RFPD FDC8601 3,000
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    Avnet Silica FDC8601 21 Weeks 3,000
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    Chip1Stop FDC8601 Cut Tape 2,389
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    EBV Elektronik FDC8601 22 Weeks 3,000
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    FDC8601 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC8601 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TRENCH SSOT-6 Original PDF

    FDC8601 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDC8601

    FDC8601

    Abstract: No abstract text available
    Text: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description „ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDC8601 FDC8601

    FDC8601

    Abstract: No abstract text available
    Text: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description ̈ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDC8601 FDC8601