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    onsemi FDC8878

    MOSFET N-CH 30V 8A/8A SUPERSOT6
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    DigiKey FDC8878 Reel 3,000
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    Avnet Americas FDC8878 Reel 0 Weeks, 2 Days 1,924
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    FDC8878 Reel 16 Weeks 3,000
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    Mouser Electronics FDC8878 22,509
    • 1 $0.76
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    Verical FDC8878 99,000 3,000
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    FDC8878 50,248 667
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    FDC8878 9,000 667
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    FDC8878 3,000 3,000
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    FDC8878 2,671 667
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    FDC8878 1,280 14
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    FDC8878 1,139 667
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    FDC8878 128 13
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    Arrow Electronics FDC8878 1,280 1
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    FDC8878 Cut Strips 128 16 Weeks 1
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    Newark FDC8878 Cut Tape 1
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    FDC8878 Reel 3,000
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    Future Electronics FDC8878 Reel 6,000 16 Weeks 3,000
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    Onlinecomponents.com FDC8878
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    Bristol Electronics FDC8878 14,791
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    Quest Components FDC8878 11,832
    • 1 $1.796
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    • 10000 $0.5388
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    Rochester Electronics FDC8878 63,058 1
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    NexGen Digital FDC8878 434
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    Richardson RFPD FDC8878 3,000
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    Avnet Asia FDC8878 16 Weeks 3,000
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    Avnet Silica FDC8878 17 Weeks 3,000
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    Chip One Stop FDC8878 Cut Tape 2,736 0 Weeks, 1 Days 1
    • 1 $0.418
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    EBV Elektronik FDC8878 18 Weeks 3,000
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    Flip Electronics FDC8878 45,401
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    New Advantage Corporation FDC8878 6,000 1
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    Fairchild Semiconductor Corporation FDC8878

    Transistors
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    Vyrian FDC8878 24,899
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    Win Source Electronics FDC8878 120,000
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    onsemi FDC8878NL

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    Win Source Electronics FDC8878NL 110,000
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    FDC8878 Datasheets (1)

    Part
    ECAD Model
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    PDF
    FDC8878 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-SSOT Original PDF

    FDC8878 Datasheets Context Search

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    FDC8878

    Abstract: No abstract text available
    Text: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.


    Original     		FDC8878 FDC8878 PDF

    FDC8878

    Abstract: No abstract text available
    Text: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.


    Original     		FDC8878 FDC8878 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description ̈ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.


    Original     		FDC8878 PDF