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    onsemi FDC8884

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
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    Avnet Americas FDC8884 Reel 0 Weeks, 2 Days 4,546
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    Verical FDC8884 36,000 1,849
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    Rochester Electronics FDC8884 69,361 1
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    Flip Electronics FDC8884 55,290
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    FLIP ELECTRONICS FDC8884

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
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    DigiKey FDC8884 Reel 4,000
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    FDC8884 Datasheets (1)

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    FDC8884 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF

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    FDC8884

    Abstract: No abstract text available
    Text: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 PDF

    FDC8884

    Abstract: marking I58
    Text: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 marking I58 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 PDF