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    FDC8886 Price and Stock

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    Rochester Electronics LLC FDC8886

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    DigiKey FDC8886 Bulk 112,596 1,575
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    onsemi FDC8886

    Trans MOSFET N-CH 30V 6.5A 6-Pin SSOT T/R - Tape and Reel (Alt: FDC8886)
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    Avnet Americas FDC8886 Reel 16 Weeks 6,000
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    Mouser Electronics FDC8886 4,876
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    Verical FDC8886 6,000 3,000
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    FDC8886 2,970 38
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    Arrow Electronics FDC8886 6,000 16 Weeks 3,000
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    FDC8886 2,970 1
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    Newark FDC8886 Reel 3,000
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    Future Electronics FDC8886 Reel 16 Weeks 6,000
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    Onlinecomponents.com FDC8886
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    Rochester Electronics FDC8886 112,596 1
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    TME FDC8886 3
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    Richardson RFPD FDC8886 6,000
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    Avnet Silica FDC8886 17 Weeks 3,000
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    New Advantage Corporation FDC8886 3,000 1
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    Fairchild Semiconductor Corporation FDC8886

    FDC8886 - 30V N-Channel Power Trench MOSFET
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    Rochester Electronics FDC8886 18,000 1
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    FDC8886 Datasheets (1)

    Part
    ECAD Model
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    Description
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    PDF
    FDC8886 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF

    FDC8886 Datasheets Context Search

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    MARKING 886

    Abstract: FDC8886
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 MARKING 886 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 FDC8886 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC8886 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8886 PDF