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    FDD10N20LZ Price and Stock

    onsemi FDD10N20LZTM

    MOSFET N-CH 200V 7.6A DPAK
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    DigiKey FDD10N20LZTM Reel
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    TME FDD10N20LZTM 1
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    Fairchild Semiconductor Corporation FDD10N20LZTM

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    Bristol Electronics FDD10N20LZTM 20 3
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    Quest Components FDD10N20LZTM 16
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    Win Source Electronics FDD10N20LZTM 2,500
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    FDD10N20LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD10N20LZTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A DPAK-3 Original PDF

    FDD10N20LZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    fdd10n20

    Abstract: No abstract text available
    Text: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Features Description • RDS on = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		FDD10N20LZ FDD10N20LZ fdd10n20 PDF

    FDD10N20LZ

    Abstract: 200V 200A mosfet
    Text: TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS on = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS


    Original     		FDD10N20LZ FDD10N20LZ 200V 200A mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS on = 0.30( Typ.) @ VGS = 10V, ID = 3.8A • Low Gate Charge ( Typ.12nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS


    Original     		FDD10N20LZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDD10N20LZ PDF