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    FDD850N10L Search Results

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    FDD850N10L Price and Stock

    onsemi FDD850N10L

    MOSFET N-CH 100V 15.7A DPAK
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    DigiKey FDD850N10L Cut Tape 8,497 1
    • 1 $1.51
    • 10 $0.983
    • 100 $1.51
    • 1000 $0.50765
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    FDD850N10L Digi-Reel 8,497 1
    • 1 $1.51
    • 10 $0.983
    • 100 $1.51
    • 1000 $0.50765
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    FDD850N10L Reel 5,000 2,500
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    • 10000 $0.44574
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    Avnet Americas FDD850N10L Reel 9 Weeks 2,500
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    • 10000 $0.43264
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    Mouser Electronics FDD850N10L 20
    • 1 $1.18
    • 10 $0.833
    • 100 $0.637
    • 1000 $0.495
    • 10000 $0.422
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    Newark FDD850N10L Reel 2,500
    • 1 $0.582
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    • 100 $0.582
    • 1000 $0.582
    • 10000 $0.507
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    Future Electronics FDD850N10L Reel 9 Weeks 2,500
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    • 10000 $0.42
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    FDD850N10L Reel 6 Weeks 2,500
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    Onlinecomponents.com FDD850N10L
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    Bristol Electronics FDD850N10L 4,650
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    TME FDD850N10L 2,426 1
    • 1 $1.06
    • 10 $0.81
    • 100 $0.65
    • 1000 $0.61
    • 10000 $0.61
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    Richardson RFPD FDD850N10L 2,500
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    • 10000 $0.42
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    Avnet Silica FDD850N10L 10 Weeks 2,500
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    EBV Elektronik FDD850N10L 11 Weeks 2,500
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    onsemi FDD850N10LD

    MOSFET N-CH 100V 15.3A TO252-4L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDD850N10LD Reel
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    FDD850N10LD Digi-Reel 1
    • 1 $1.12
    • 10 $1.12
    • 100 $1.12
    • 1000 $1.12
    • 10000 $1.12
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    FDD850N10LD Cut Tape
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    EBV Elektronik FDD850N10LD 143 Weeks 2,500
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    Fairchild Semiconductor Corporation FDD850N10L

    15.7 A, 100 V, 0.096 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FDD850N10L 190
    • 1 $0.9525
    • 10 $0.9525
    • 100 $0.4445
    • 1000 $0.4445
    • 10000 $0.4445
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    Others FDD850N10L

    INSTOCK
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    Chip 1 Exchange FDD850N10L 27,428
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    FDD850N10L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD850N10L Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.7A DPAK-3 Original PDF
    FDD850N10LD Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.3A DPAK Original PDF

    FDD850N10L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		FDD850N10LD PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		FDD850N10LD PDF

    FDD850N10L

    Abstract: FDD85
    Text: FDD850N10L N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 mΩ Features Description • RDS on = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD850N10L FDD850N10L FDD85 PDF

    FDD850N10L

    Abstract: 157A
    Text: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDD850N10L FDD850N10L 157A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		FDD850N10LD PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A • RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A • Low Gate Charge ( Typ. 22.2nC) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDD850N10L PDF

    FDD850N10L

    Abstract: No abstract text available
    Text: FDD850N10L N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 mΩ Features Description • RDS on = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		FDD850N10L FDD850N10L PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 PDF