FDPF10N50FT
Abstract: No abstract text available
Text: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP10N50F
FDPF10N50FT
FDPF10N50FT
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FDPF10N50FT
Abstract: fdpf10n50 FDP10N50F
Text: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP10N50F
FDPF10N50FT
FDPF10N50FT
fdpf10n50
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