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    Abstract: No abstract text available
    Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF

    FDPF8N50NZF

    Abstract: No abstract text available
    Text: UniFET-II FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF FDPF8N50NZF

    FDPF8N50

    Abstract: No abstract text available
    Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF FDPF8N50NZF FDPF8N50