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    FDPF045N10A Price and Stock

    onsemi FDPF045N10A

    MOSFET N-CH 100V 67A TO220F
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    Mouser Electronics FDPF045N10A 1,483
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    Newark FDPF045N10A Bulk 334 1
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    Rochester Electronics FDPF045N10A 997 1
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    Fairchild Semiconductor Corporation FDPF045N10A

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    Quest Components FDPF045N10A 80
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    Win Source Electronics FDPF045N10A 13,284
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    FDPF045N10A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF045N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 67A TO-220-3 Original PDF

    FDPF045N10A Datasheets Context Search

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    100V 100A Mosfet

    Abstract: FDPF045N10A
    Text: FDPF045N10A N-Channel PowerTrench MOSFET 100V, 67A, 4.5mΩ Features Description • RDS on = 3.7mΩ ( Typ.)@ VGS = 10V, ID = 67A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDPF045N10A FDPF045N10A 100V 100A Mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDPF045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDPF045N10A FDPF045N10A

    Untitled

    Abstract: No abstract text available
    Text: FDPF045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.7 mΩ (Typ.) @ VGS = 10 V, ID = 67 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDPF045N10A