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FMR23N50E Abstract: tc1602 Schematics 5250 Text: FMR23N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	PDF	FMR23N50E FMR23N50E tc1602 Schematics 5250
FMR23N50E Abstract: D01400 FMR23N50ES Text: FMR23N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	PDF	FMR23N50ES FMR23N50E D01400 FMR23N50ES
FMV07N90E Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)	Original	PDF	O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
23N50E Abstract: Power MOSFET 23n50e 23n50e semiconductor 23n50e mosfet mosfet 23n50e FMR23N50E 23N50E datasheet 100V 100A Mosfet MS5F06945 Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	PDF	FMR23N50E MS5F06945 October-26-2007 H04-004-05 MS5F06945 H04-004-03 23N50E Power MOSFET 23n50e 23n50e semiconductor 23n50e mosfet mosfet 23n50e FMR23N50E 23N50E datasheet 100V 100A Mosfet
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
23n50e Abstract: Power MOSFET 23n50e 23n50e mosfet FMR23N50E N-channel MOSFET 23n50e mosfet 23n50e 23n50e semiconductor Text: DATE DRAWN Oct.-26-'07 CHECKED Oct.-26-'07 CHECKED Oct.-26-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor	Original	PDF	October-26-2007 MS5F06945 FMR23N50E H04-004-05 MS5F06945 H04-004-03 23n50e Power MOSFET 23n50e 23n50e mosfet FMR23N50E N-channel MOSFET 23n50e mosfet 23n50e 23n50e semiconductor
23n50e Abstract: FMR23N50E Ic C 141 23N50ES Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	PDF	FMR23N50ES MS5F7238 H04-004-05 H04-004-03 23n50e FMR23N50E Ic C 141 23N50ES