FPD2250SOT89CE Search Results

FPD2250SOT89CE Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FPD2250SOT89CE		Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT		Original	PDF

FPD2250SOT89CE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250 Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	PDF	FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 filtronic 921 J370 Text: FPD2250SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant	Original	PDF	FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD1500SOT89 FPD2250SOT89CE MIL-HDBK-263 filtronic 921 J370
pseudomorphic HEMT Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250 Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	PDF	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	PDF	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
FPD2250 Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE FPD2250SOT89E MIL-HDBK-263 FPD1500SOT89 FPD2250SOT89 Filtronic Compound Semiconductors FPD2250SOT Text: FPD2250SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • Datasheet v2.3 29 dBm Output Power (P1dB) 14 dB Small-Signal Gain (SSG) 1.0 dB Noise Figure 44 dBm Output IP3 50% Power-Added Efficiency FPD2250SOT89E - RoHS compliant	Original	PDF	FPD2250SOT89 1850MHZ) FPD2250SOT89E FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE FPD2250 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 157 FPD2250SOT89CE MIL-HDBK-263 FPD1500SOT89 Filtronic Compound Semiconductors FPD2250SOT