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    R5F109AAKSP#V0G Renesas Electronics Corporation Microcontrollers with Low Consumption Current for Automotive Applications Visit Renesas Electronics Corporation
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    MOSFET N-CH 800V 10A TO3P
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    FQA10N80C_F109 Datasheets (2)

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    FQA10N80C_F109 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQA10N80C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 10A TO-3P Original PDF

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    FQA10N80C-F109

    Abstract: No abstract text available
    Text: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is


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    FQA10N80C FQA10N80C-F109 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 44 nC) produced using Fairchild Semiconductor’s proprietary planar


    Original
    FQA10N80C PDF

    MOSFET 800V 10A

    Abstract: mosfet 10a 800v F109 FQA10N80C
    Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQA10N80C MOSFET 800V 10A mosfet 10a 800v F109 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQA10N80C_F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Ω Features Description • 10 A, 800 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original
    FQA10N80C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQA10N80C PDF

    MOSFET 800V 10A

    Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
    Text: QFET FQA10N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQA10N80C FQA10N80C MOSFET 800V 10A mosfet 10a 800v mosfet 10a 800v high power F109 PDF