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    FQD19N10 Price and Stock

    onsemi FQD19N10TM

    MOSFET N-CH 100V 15.6A DPAK
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    DigiKey FQD19N10TM Reel
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    Rochester Electronics FQD19N10TM 841 1
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    TME FQD19N10TM 1
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    onsemi FQD19N10TM_F080

    MOSFET N-CH 100V 15.6A DPAK
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    onsemi FQD19N10LTF

    - Bulk (Alt: FQD19N10LTF)
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    onsemi FQD19N10LTM

    Trans MOSFET N-CH 100V 15.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD19N10LTM)
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    Avnet Americas FQD19N10LTM Reel 16 Weeks 2,500
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    Mouser Electronics FQD19N10LTM 36,290
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    Newark FQD19N10LTM Cut Tape 6,403 1
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    FQD19N10LTM Reel 2,500
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    FQD19N10LTM Reel 2,500
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    Onlinecomponents.com FQD19N10LTM
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    TME FQD19N10LTM 2,328 1
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    Richardson RFPD FQD19N10LTM 2,500
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    Avnet Asia FQD19N10LTM 16 Weeks 2,500
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    Avnet Silica FQD19N10LTM 17 Weeks 2,500
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    Chip1Stop FQD19N10LTM 2,500
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    EBV Elektronik FQD19N10LTM 18 Weeks 2,500
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    Flip Electronics FQD19N10LTM 929
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    Fairchild Semiconductor Corporation FQD19N10TM

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    Bristol Electronics FQD19N10TM 777
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    Quest Components FQD19N10TM 621
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    FQD19N10TM 380
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    FQD19N10 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD19N10 Fairchild Semiconductor 100V N-Channel MOSFET Original PDF
    FQD19N10L Fairchild Semiconductor 100V LOGIC N-Channel MOSFET Original PDF
    FQD19N10LTF Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD19N10LTF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.6A DPAK Original PDF
    FQD19N10LTM Fairchild Semiconductor 100V N-Channel Logic Level QFET Original PDF
    FQD19N10LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.6A DPAK Original PDF
    FQD19N10TF Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQD19N10TF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.6A DPAK Original PDF
    FQD19N10TM Fairchild Semiconductor 100V N-Channel QFET Original PDF
    FQD19N10TM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.6A DPAK Original PDF
    FQD19N10TM_F080 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15.6A DPAK Original PDF
    FQD19N10TM_NL Fairchild Semiconductor 100V N-Channel QFET Original PDF

    FQD19N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD19N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10 N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD19N10

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD19N10L FQU19N10L

    FQD19N10

    Abstract: FQU19N10
    Text: FQD19N10 / FQU19N10 January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD19N10 FQU19N10 FQU19N10

    FQD19N10TM

    Abstract: No abstract text available
    Text: FQD19N10 N-Channel QFET MOSFET 100 V, 15.6 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10 FQD19N10 FQD19N10TM

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10 / FQU19N10 January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD19N10 FQU19N10

    FQD19N10L

    Abstract: FQU19N10L
    Text: FQD19N10L / FQU19N10L January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD19N10L FQU19N10L FQU19N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD19N10L FQU19N10L FQD19N10LTF O-252 FQD19N10LTM

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10 / FQU19N10 August 2000 QFET TM FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD19N10 FQU19N10 FQU19N10TU O-251 FQU19N10

    FQD19N10L

    Abstract: FQU19N10L
    Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD19N10L FQU19N10L FQU19N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10 N-Channel QFET MOSFET 100 V, 15.6 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10

    FQD19N10

    Abstract: FQU19N10
    Text: FQD19N10 / FQU19N10 August 2000 QFET TM FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD19N10 FQU19N10 FQU19N10

    Untitled

    Abstract: No abstract text available
    Text: FQD19N10L / FQU19N10L August 2000 QFET TM FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD19N10L FQU19N10L FQU19N10LTU O-251 FQU19N10L

    fqd19n10l

    Abstract: No abstract text available
    Text: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQD19N10L FQD19N10L

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    YAGEO RC0603FR

    Abstract: CC0603KRX7R7BB104 12W26 DRA127-151-R Circuit diagram of 4W LED drive ADR1581 C3524 Yageo X7R Led driver 10W schematic LED 10w RGB
    Text: Supertex inc. HV9985DB1 Three Channel LED Driver Demoboard General Description Specifications The HV9985DB1 is a three channel boost LED driver demoboard using Supertex’s HV9985 LED Driver IC. Parameter Input voltage 22 - 26V The LED driver can be used to drive RGB or multi-channel


    Original     		PDF HV9985DB1 HV9985DB1 HV9985 300mA 250kHz YAGEO RC0603FR CC0603KRX7R7BB104 12W26 DRA127-151-R Circuit diagram of 4W LED drive ADR1581 C3524 Yageo X7R Led driver 10W schematic LED 10w RGB

    ASJ CR16

    Abstract: CL21B104KBAC CL31B104KCFNNN CL21B104KB ROHM capacitor 100nf 50v 0603 x7r Neltron 2213S 1nF 2000V X7R CR16* ASJ resistor RK73H2HTTE CR16 ASJ
    Text: C O M P A N PD64001/H 1-Port PoE Manager Datasheet Y C O N F I D E N T I A L Introduction _ The PD64001/H is a single-port Power over Ethernet PSE Power Source Equipment Manager. The PSE Manager allows for the detection of IEEE 802.3af2003 and IEEE802.3at-draft4.2 powered devices,


    Original     		PDF PD64001/H PD64001/H. 3af-2003-compliant IEEE802 PD64001 PD64001H ASJ CR16 CL21B104KBAC CL31B104KCFNNN CL21B104KB ROHM capacitor 100nf 50v 0603 x7r Neltron 2213S 1nF 2000V X7R CR16* ASJ resistor RK73H2HTTE CR16 ASJ

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    Untitled

    Abstract: No abstract text available
    Text: C O M P A N P D 6 4 0 0 1 / H 1 -P o r t P o E M a n a g e r D a t a s h e e t Y C O N F I D E N T I A L I nt roduc t ion _ The PD64001/H is a single-port Power over Ethernet PSE Power Source Equipment Manager. The PSE Manager allows for the detection of IEEE 802.3af2003 and IEEE802.3at-draft4.2 powered devices,


    Original     		PDF PD64001/H 3af2003 IEEE802 PD64001H

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM