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    FST300 Search Results

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    FST300 Price and Stock

    Microchip Technology Inc FST30050

    DIODE MOD SCHOTT 50V 150A TO-244
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FST30050 Bulk 15
    • 1 -
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    • 100 $42.63733
    • 1000 $42.63733
    • 10000 $42.63733
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    ASSMANN WSW components GmbH A-M12A12FST-30016BK

    CIR CBL 12POS PLUG TO WIRE 9.84'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-M12A12FST-30016BK Bag 1
    • 1 $25.56
    • 10 $20.836
    • 100 $16.989
    • 1000 $16.37248
    • 10000 $16.37248
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    NSI FST300

    Staples 1-3/8 X 13/16 Cbl Stpl (Jar 500)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC FST300 500
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    • 100 -
    • 1000 $0.15
    • 10000 $0.14
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    Pulse Electronics Corporation FST300

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus FST300 1
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    FST300 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FST30035 Coors Components Schottky PowerMod Scan PDF
    FST30035 Microsemi Schottky PowerMod Scan PDF
    FST30035 Microsemi Schottky PowerMod Scan PDF
    FST30035A Microsemi Schottky PowerMod Scan PDF
    FST30035D Microsemi Schottky PowerMod Scan PDF
    FST30040 Coors Components Schottky PowerMod Scan PDF
    FST30040 Microsemi Schottky PowerMod Scan PDF
    FST30040 Microsemi Schottky PowerMod Scan PDF
    FST30040A Microsemi Schottky PowerMod Scan PDF
    FST30040D Microsemi Schottky PowerMod Scan PDF
    FST30045 Coors Components Schottky PowerMod Scan PDF
    FST30045 Microsemi Schottky PowerMod Scan PDF
    FST30045 Microsemi Schottky PowerMod Scan PDF
    FST30045A Microsemi Schottky PowerMod Scan PDF
    FST30045D Microsemi Schottky PowerMod Scan PDF
    FST30050 Coors Components Schottky PowerMod Scan PDF
    FST30050 Microsemi Schottky PowerMod Scan PDF
    FST30050 Microsemi Schottky PowerMod Scan PDF
    FST30050A Microsemi Schottky PowerMod Scan PDF
    FST30050D Microsemi Schottky PowerMod Scan PDF

    FST300 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FST30035

    Abstract: FST30040 FST30045 FST30050
    Text: Schottky PowerMod FST30035 - FST30050 A Dim. Inches B C G Baseplate A=Common Anode E F Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher A B C D E F G Millimeters Min. Max. Min. Max. Notes -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160


    Original     		FST30035 FST30050 1/4-20UNC FST30035* FST30040* FST30045* FST30050* O-244AB FST30040 FST30045 FST30050 PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Text: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


    Original     		O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    scr 8a 200v

    Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
    Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified


    Original     		394hex 450sq. 678hex scr 8a 200v do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    SCR 30A 100V

    Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
    Text: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules


    Original     		DO203AA 1N6391 1N5812-16 1N3890-3 1N3890-3A 00V-1600V 248sq. 330sq. SCR 30A 100V do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr PDF

    pt4013

    Abstract: No abstract text available
    Text: Schottkv Rectifiers Part N u m b e r i M icrosem i | D ivision ! i Package O utline I Type . Microsemi Mi Data Spec . Sheet ID IO Am ps) VR IFS M j V F @ IO (Volts) (A m p s) ! (Volts) |- FST30035 C olorado TO -244 STD 6646 300 C PT30040 C olorado STD STD


    OCR Scan     		PDF

    FST30035

    Abstract: FST30040 FST30045 FST30050
    Text: Schottky PowerMod FST30035 - FST30050 M Dim. Inches 6 Min. Baseplate A=Common Anode 1/4-20UNC with Captive Lockwasher v A B C D E F G Baseplate Common Cathode — 1.350 0.700 -3.140 -0.280 Max. 2.450 1.400 0.800 0.625 3.160 3.650 0.300 M illim eters


    OCR Scan     		FST30035 FST3Q050 1/4-20UNC FST30035* FST30040* FST30045* FST30050* C-203 FST30040 FST30045 FST30050 PDF

    Untitled

    Abstract: No abstract text available
    Text: S c h o ttk y PowerMod FST30035 - FST30050 y Dim. Inches Baseplate A*Common Anode A B C D E F G V :J- Baseplate Common Cathode 1/+-20UNC with Captive Lockwasher ° » | I w Min. Max. — 1.350 0.700 — 3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300


    OCR Scan     		FST30035 FST30050 -20UNC FST30035* FST30040* FST30045* FST30050* 1000e PDF

    BYS93-50

    Abstract: BYS93-35 BYS93-40 BYS93-45 FST30035 FST30040 FST30045 FST30050
    Text: CO OR S C O M P O N E N T S "öl INC SchottkyPowerMod 2 D 0 0 1 4 9 DE 12LJ3G0DL, D O D O IM T D - p _ .£ > 3 - ^ ? 3 FST300 V4*20 UNO With ’ Captive Lockwasher Guard Ring Reverse Protection Center Tap 50 Volts Vm u l VfwM 300 Amperes 175°C J unction Temperature


    OCR Scan     		FST30Q -20UM0WHh FST30035 BYS93-35 FST30040 BYS93-40 FST30045 BYS93-45 FST30050 BYS93-50 BYS93-50 BYS93-35 BYS93-40 BYS93-45 PDF

    FST30050

    Abstract: FST30035 FST30040 FST30045
    Text: FST30035 - FST30050 Schottky PowerMod A Dim. Inches B V Baseplate A=Common Anode ¥ Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher ° N Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29 17.78 -


    OCR Scan     		FST30035 FST30050 1/4-20UNC FST30035* FST30040* FST30045* FST30050* T0-244AB FST30050 FST30040 FST30045 PDF

    R3003

    Abstract: FST30035 FST30040 FST30045 FST30050
    Text: S c h o tt k y Pow erMcx FS1f30035 FS1r30050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher °N | W ° Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29


    OCR Scan     		r30035 r30050 1/4-20UNC T0-244AB FST30035* FST30040* FST30045* FST30050* 1000E R3003 FST30035 FST30040 FST30045 FST30050 PDF