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    Rochester Electronics LLC FX20KMJ-3-B00

    HIGH SPEED SWITCHING P CHANNEL ,
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    DigiKey FX20KMJ-3-B00 Bulk 94,471 168
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    Rochester Electronics LLC FX20KMJ-06-B00

    HIGH SPEED SWITCHING P CHANNEL ,
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    DigiKey FX20KMJ-06-B00 Bulk 22,502 168
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    Diotec Semiconductor AG FX20K120

    DIODE GEN PURP 120V 20A P600
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    DigiKey FX20K120 Cut Tape 899 1
    • 1 $1.51
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    FX20K120 Ammo Pack 500 500
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    Mouser Electronics FX20K120 613
    • 1 $1.51
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    Verical FX20K120 905 144
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    Onlinecomponents.com FX20K120
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    TME FX20K120 905 1
    • 1 $0.787
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    Diotec Semiconductor AG FX20K150

    DIODE GEN PURP 150V 20A P600
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    DigiKey FX20K150 Bulk 1,000
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    Mouser Electronics FX20K150 845
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    Onlinecomponents.com FX20K150
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    TME FX20K150 1
    • 1 $0.755
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    Vitesse Semiconductor Corporation FX20KE00117GC

    Electronic Component
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    Quest Components FX20KE00117GC 36
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    FX20K Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FX20KMJ-03 Mitsubishi Pch POWER MOSFET Original PDF
    FX20KMJ-03 Renesas Technology High-Speed Switching Use Pch Power MOS FET Original PDF
    FX20KMJ-03-A8 Renesas Technology FET Transistor, High-Speed Switching Use Pch Power MOS FET Original PDF
    FX20KMJ-06 Mitsubishi Pch POWER MOSFET Original PDF
    FX20KMJ-06 Renesas Technology MITSUBISHI Pch POWER MOSFET Original PDF
    FX20KMJ-2 Mitsubishi Pch POWER MOSFET Original PDF
    FX20KMJ-2 Renesas Technology MITSUBISHI Pch POWER MOSFET Original PDF
    FX20KMJ-3 Mitsubishi Pch POWER MOSFET Original PDF
    FX20KMJ-3 Renesas Technology MITSUBISHI Pch POWER MOSFET Original PDF

    FX20K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FX20KMJ-2

    Abstract: 8025A
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		PDF FX20KMJ-2 100ns FX20KMJ-2 8025A

    Untitled

    Abstract: No abstract text available
    Text: FX20K120 . FX20K150 FX20K120 . FX20K150 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2013-02-01 Nominal current Nennstrom Stand off voltage Sperrspannung ±0.1


    Original     		PDF FX20K120 FX20K150 UL94V-0

    FX20KMJ-3

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		PDF FX20KMJ-3 100ns FX20KMJ-3

    FX20KMJ-06

    Abstract: No abstract text available
    Text: FX20KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1442-0200 Previous: MEJ02G0275-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 60 V rDS(ON) (max) : 97 mΩ ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 50 ns


    Original     		PDF FX20KMJ-06 REJ03G1442-0200 MEJ02G0275-0101) PRSS0003AB-A O-220FN) FX20KMJ-06

    FX20KMJ-03-A8

    Abstract: FX20KMJ-03
    Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns


    Original     		PDF FX20KMJ-03 REJ03G0259-0100 O-220FN FX20KMJ-03-A8 FX20KMJ-03

    FX20KMJ-3

    Abstract: No abstract text available
    Text: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns


    Original     		PDF FX20KMJ-3 REJ03G1444-0200 MEJ02G0289-0101) PRSS0003AB-A O-220FN) FX20KMJ-3

    8025A

    Abstract: FX20KMJ-06
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		PDF FX20KMJ-06 8025A FX20KMJ-06

    FX20KMJ-3

    Abstract: No abstract text available
    Text: FX20KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1444-0200 Previous: MEJ02G0289-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 0.29 Ω ID : –20 A Integrated Fast Recovery Diode (TYP.) : 100 ns


    Original     		PDF FX20KMJ-3 REJ03G1444-0200 MEJ02G0289-0101) PRSS0003AB-A O-220FN) FX20KMJ-3

    FX20K120

    Abstract: No abstract text available
    Text: FX20K120 . FX20K150 FX20K120 . FX20K150 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2012-05-02 Nominal current Nennstrom Stand off voltage Sperrspannung ±0.1


    Original     		PDF FX20K120 FX20K150 UL94V-0 FX20K120

    FX20KMJ-03

    Abstract: FX20KMJ-03-A8
    Text: FX20KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0259-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 0.13 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns


    Original     		PDF FX20KMJ-03 REJ03G0259-0100 O-220FN FX20KMJ-03 FX20KMJ-03-A8

    Untitled

    Abstract: No abstract text available
    Text: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns


    Original     		PDF FX20KMJ-2 REJ03G1443-0200 MEJ02G0282-0101) PRSS0003AB-A O-220FN)

    FX20KMJ-2

    Abstract: No abstract text available
    Text: FX20KMJ-2 High-Speed Switching Use Pch Power MOS FET REJ03G1443-0200 Previous: MEJ02G0282-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : – 100 V rDS(ON) (max) : 0.26 Ω ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 100 ns


    Original     		PDF FX20KMJ-2 REJ03G1443-0200 MEJ02G0282-0101) PRSS0003AB-A O-220FN) FX20KMJ-2

    JESD22-A114

    Abstract: No abstract text available
    Text: FX20K120 FX20K120 Protectifiers – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2010-06-23 ±0.1 20 A Stand off voltage Sperrspannung 120 V Plastic case Kunststoffgehäuse 7.5±0.1


    Original     		PDF FX20K120 UL94V-0 JESD22-A114

    FX20KMJ-03

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


    Original     		PDF FX20KMJ-03 FX20KMJ-03

    FX20KMJ-2

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE •V dss .-1 0 0 V • rDS ON (MAX) . 0.26Í2


    OCR Scan     		PDF FX20KMJ-2 100ns O-220FN

    OT 306

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-06 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-06 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-60V • rDS ON (MAX) .97 m i2


    OCR Scan     		PDF FX20KMJ-06 97mi2 O-220FN 7l0-32 57KH2 571Q12 OT 306

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V DRIVE • V d s s .-150V • rDS ON (MAX) . 0.29Í2


    OCR Scan     		PDF FX20KMJ-3 -150V 100ns O-220FN

    Untitled

    Abstract: No abstract text available
    Text: VITESSE VG FX20K /V 6FX 40K /V G FX 1O O K / VG FX 200K /V G FX 350K H igh Performance FX Family Gate Arrays FEATURES • Superior performance: High speed and low power dissipation • Embedded custom functions and megacell options available • Channelless array architecture


    OCR Scan     		PDF FX20K GFX20K/VGFX40K/VGFX100K/VGFX200K/VGFX350K

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20KMJ-03 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 4V DRIVE • V d s s .-30V • rDS ON (MAX) . 0.130


    OCR Scan     		PDF FX20KMJ-03 O-220FN

    FX50SM-2

    Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)


    OCR Scan     		PDF fx6as-03 fx6km-03 to-220fn fx6um-03 to-220 fx6vs-03 to-220s fx3as-06 fx3km-06 FX50SM-2 FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX6KM-06

    FS10KM12

    Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
    Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings


    OCR Scan     		PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20