FZT658 Search Results

Contextual Info: SMD Type Product specification FZT658 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9

pnp transistor 1000v

Abstract: FZT758 FZT658 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT758 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE – FZT658 PARTMARKING DETAIL – FZT758 TYPICAL CHARACTERISTICS IC/IB =10 1.6

fzt458

Contextual Info: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658

FZT658

Contextual Info: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT658 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage 4 1 Base 1 2 Collector

Contextual Info: FZT658 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)320 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)100m

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT658 DZT658 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 ISSU E 4 - OCTOBER 1995_ FEATURES * 400 Volt V,CEO Low saturation voltage CO M PLEM ENTARY TYPE PARTMARKING DETAIL - FZT758 FZT658 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - FEBRUARY 1995_ FEATURES * 400 V o lt VCE0 * 0.5 A m p c o n tin u o u s cu rre n t * L o w s a tu ra tio n vo lta g e CO M PLEM ENTARY TYPE - FZT658 PARTM ARKING D E T A IL - FZT758

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995_ FEATURES * 400 V o lt VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTAR Y TYPE - FZT758 PARTM ARKING DETAIL - FZT658 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: A Product Line of Diodes Incorporated FZT658 Green 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • BVCEO > 400V IC = 500mA High Continuous Current ICM = 1A Peak Pulse Current Low Saturation Voltage VCE SAT < 250mV @ 50mA

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage IC/IB=10 IC/IB=20 IC/IB=50 1.6 1.4 Tamb=25°C 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.001 0.01 -55°C +25°C +100°C

FZT658

Abstract: FZT758 DSA003713
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT658 TYPICAL CHARACTERISTICS 1.4 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C 1.4 1.2 1.0 0.6 0.2 COMPLEMENTARY TYPE PARTMARKING DETAIL - 1.2 1.0 10 20 VCE=10V 0.001 0.01 0.1 1 I+ - Collector Current Amps 200

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ FEATURES * High V CE0- 350V * Low saturation voltage C O M PLEM EN TA RY T Y P E - BSP16 PARTMARKING D E T A IL - BSP19 ABSOLUTE MAXIMUM RATINGS. SYM BO L PARAM ETER

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

12V to 300V dc dc converter step-up

Abstract: DC DC converter 1A 400V TO 220 Package DO3316-223 MARKING c1s SOT23-6 C1s TOP MARKING d03316-103 LT1303 LT1305 LT1305CS8 MBRS130LT3
Contextual Info: LT1305 Micropower High Power DC/DC Converter with Low-Battery Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1305 is a micropower step-up DC/DC converter that uses Burst ModeTM operation. Similar to the LT1303, the LT1305 features a 2A internal low-loss switch and can

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

Contextual Info: LT1305 Micropower High Power DC/DC Converter with Low-Battery Detector DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1305 is a micropower step-up DC/DC converter that uses Burst ModeTM operation. Similar to the LT1303, the LT1305 features a 2A internal low-loss switch and can

NPN VCEO 500V sot23

Abstract: ZTX857 FZT657 ZTX458
Contextual Info: High Voltage Transistors NPN High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance NPN specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IC/IB =10 1.6 Tamb=25°C IC/IB =20 1.4 -55°C +25°C +100°C +175°C 1.6 IC/IB =50 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 ISSUE 2 – FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE