Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 - FEATURES * High Gain + Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Relay drivers, DC-DC converters P A R T M A R K IN G D ET A IL FZT692B

FZT692

Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very lo w saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE - FZT692B PARTMARKING DETAIL - FZT792A c B ABSOLUTE MAXIMUM RATINGS

Contextual Info: SOT223 PNP SIUCON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEM BER 1995 FEATURES * High gain and Very low saturation voltage ♦ APPLICATIONS * Battery powered circuits COMPLEMENTARY T Y PE PARTMARKING DETAIL- FZT692B FZT792A B PARAMETER

Contextual Info: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V   BVCBO > 70V   IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.

Contextual Info: FZT692B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)55.0 h(FE) Min. Current gain.150 h(FE) Max. Current gain.

FZT792A

Abstract: FZT692B DSA003717
Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS

Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS

FZT692B

Abstract: DSA003713
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS - Volts V 0.1 1 0.01 1 10 VCE(sat) v IC VCE=2V - (Volts) 1K 500 V 0.01 0.1 1.4 IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 hFE v IC VBE(sat) v IC

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 I- FEATU RES * High Gain + Very low saturation voltage * * Ul A P P L IC A T IO N S Darlington replacement Relay drivers, DC-DC converters

Contextual Info: Transistors SMD Type Product specification FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1

MARKING SMD npn TRANSISTOR 1a

Abstract: FZT692B smd transistor marking 1A TRANSISTOR SMD 1A smd ic marking 1A smd transistor 2A TRANSISTOR SMD 1a 9 SMD TRANSISTOR MARKING 2A SOT223 marking 1A BR smd transistor MARKING
Contextual Info: Transistors SMD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT692B ISSUE 3 - OCTOBER 1995 IC/IB=200 IC/IB=100 IC/IB=10 0.8 Tamb=25°C 0.6 0.6 0.4 0.4 0.2 0.2 0.01 0.1 1 10 0.01 VCE=2V 1.5K 1.0 1K 0.8 0.6 500 0.4 0.2 0.01 0.1 1.6 0.6 0.4 0.01 + 0.1 1 10 SYMBOL

FZT858

Abstract: fzt957
Contextual Info: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DMN62D4SDW-7

Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
Contextual Info: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

ztx1053a

Abstract: ZTX851 ZTX853
Contextual Info: Medium Power Transistors NPN Medium Power Transistors 60 to 100 Volts These 60V to 100V devices provide excellent high performance in a wide variety of both through hole and surface mount packages. The devices are ideally suited to load management functions and their improved efficiency enables larger

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)