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    InGaAs apd photodiode

    Abstract: InGaAs APD Pre-Amplifier photodiode ge PD739C13-01 apd dark current
    Text: MITSUBISHI ELECTRIC CORPORATION Tentative I DATE:_ PARED BY: CKED BY: I ArrftOVED BY: 1. TYPE : PD739C13-01 2. APPLICATION : OPTICAL COMMUNICA1 ION 3. STRUCTURE : <>20 jim InCîaAs PIN PHOTC DIODE with 1riA 4. OUTLINE : G480XXX 5. ABSOLUTE MAXIMUM RA lTINGS


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    PDF PD739C13-01 G480XXX NOK-PD739C13-01 InGaAs apd photodiode InGaAs APD Pre-Amplifier photodiode ge PD739C13-01 apd dark current

    PD839C4-01

    Abstract: InGaAs apd photodiode InGaAs APD Pre-Amplifier avalanche 1550nm photodiode 5 Ghz
    Text: MITSUBISHI ELECTRIC CORPORATION DATE: * PARED BY: Tentative CKED BY: _ | /vrrRQVED BY: _ _ 1. TYPE : PD839C4-01 2. APPLICATION : OPTICAL COMMUNICATION 3. STRUCTURE : <>35 urn InGaAs AVALANCHE PHOTODIODE with TIA


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    PDF PD839C4-01 G480XXX GNOK-PD839C4-01-* PD839C4-01 InGaAs apd photodiode InGaAs APD Pre-Amplifier avalanche 1550nm photodiode 5 Ghz