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    G8370 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G8370 Hamamatsu InGaAs PIN photodiode - Large active areas Original PDF
    G8370 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-01 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-02 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-03 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-03 Hamamatsu Photonics InGaAs PIN photodiode Original PDF
    G8370-05 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-10 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-81 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-82 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-83 Hamamatsu InGaAs PIN photodiode Original PDF
    G8370-85 Hamamatsu InGaAs PIN photodiode Original PDF

    G8370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G8370-10

    Abstract: KIRD1058E01 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01 G8370-10 KIRD1058E01

    G8370-03

    Abstract: G8370 G8370-01 G8370-02 G8370-05 210pA
    Text: PHOTODIODE • 仕様／絶対最大定格 型名 G8370-01 G8370-02 G8370-03 G8370-05 外形寸法図/ 窓材 *1 パッケージ ➀/K TO-18 ➁/K TO-5 ➂/K TO-8 受光面サイズ mm φ1 φ2 φ3 φ5 逆電圧 VR Max. (V) 10 5 絶対最大定格 動作温度


    Original     		PDF G8370-01 G8370-02 G8370-03 G8370-05 101RDA0154JC KIRDA0155JB G8370-03 G8370 G8370-01 G8370-02 G8370-05 210pA

    G8370-81

    Abstract: G8370-82 G8370-83 G8370-85
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E04 G8370-81 G8370-82 G8370-83 G8370-85

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 G8370-01 G8370-02 G8370-03 G8370-05

    G8370-81

    Abstract: G8370-82 G8370-83 G8370-85
    Text: PHOTODIODE InGaAs PINフォトダイオード G8370-81/-82/-83/-85 低PDL Polarization Dependence Loss 本製品は 1.5 µm帯で低PDL (Polarization Dependence Loss)を実現したInGaAs PINフォトダイオードです。低雑音、 大並列抵抗という特


    Original     		PDF G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 VIRDA0155JB G8370-81 G8370-82 G8370-83 G8370-85

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E01

    2010DN

    Abstract: y 2010DN 0441 G8370-10 *2010dn KPSD1022J01 DSASW005178
    Text: PHOTODIODE InGaAs PINフォトダイオード G8370-10 大受光面 φ10 mm のセラミックタイプ 特長 用途 l 受光面サイズ: φ10 mm l 高感度: 0.95 A/W Typ. (λ=1.55 µm) l 低暗電流 l 低PDL: 5 mdB Typ., 10 mdB Max. l 感度不均一性: ±2 % Typ.


    Original     		PDF G8370-10 KIRDA0167JA KIRDB0285JA KIRDB0284JA 435-85581126-1TEL 434-3311FAX KPSD1022J01 2010DN 2010DN y 2010DN 0441 G8370-10 *2010dn KPSD1022J01 DSASW005178

    G8370-10

    Abstract: KIRD1058E01 SE-171 photodiode InGaAs
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01 G8370-10 KIRD1058E01 photodiode InGaAs

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E04

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 SE-171 KIRD1064E03

    photodiode InGaAs NEP

    Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 photodiode InGaAs NEP G8370-01 G8370-02 G8370-03 G8370-05

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370-81/-82/-83/-85 G8370-81/-82/-83/-85 G8370-81 G8370-82 G8370-83 G8370-85 SE-171 KIRD1064E03

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E01 G8370-01 G8370-02 G8370-03 G8370-05

    Untitled

    Abstract: No abstract text available
    Text: Infrared detector modules with preamps Non-cooled Type Easy-to-use detector modules with built-in preamps These infrared detector modules contain a preamp and operate by just connecting to a DC power supply. The detector element is selectable from among InGaAs and PbSe detectors. Thermoelectrically cooled types are also available. Besides these detectors, we


    Original     		PDF B1201, KIRD1035E10

    Untitled

    Abstract: No abstract text available
    Text: SMB1N-1550 v 1.0 1.07.2014 Description SMB1N-1550 is a surface mount InGaAsP High Power LED with a typical peak wavelength of 1550 nm and radiation of 16 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.


    Original     		PDF SMB1N-1550 SMB1N-1550

    L1050G-03

    Abstract: 1050nm
    Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-03 Lead Pb Free Product – RoHS Compliant L1050G-03 Infrared LED Lamp L1050G-03 is a GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1050nm.


    Original     		PDF L1050G-03 L1050G-03 1050nm. 1050nm

    L1050G-04

    Abstract: 1050nm
    Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-04 Lead Pb Free Product – RoHS Compliant L1050G-04 Infrared LED Lamp L1050G-04 is a GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1050nm.


    Original     		PDF L1050G-04 L1050G-04 1050nm. 1050nm

    SMT1550

    Abstract: 1550nm
    Text: epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1550 Lead Pb Free Product – RoHS Compliant SMT1550 High Performance NIR TOP IR LED SMT1550 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin or silicone resin.


    Original     		PDF SMT1550 SMT1550 1550nm. 1550nm 72-hour-

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1550 Lead Pb Free Product – RoHS Compliant SMT1550 High Performance NIR TOP IR LED SMT1550 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin or silicone resin.


    Original     		PDF SMT1550 SMT1550 1550nm. 1550nm 72-hour-

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-03 Lead Pb Free Product – RoHS Compliant L1200-03 Infrared LED Lamp L1200-03 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.


    Original     		PDF L1200-03 L1200-03 1200nm. 1200nm

    Untitled

    Abstract: No abstract text available
    Text: High Power Infrared LED 1550 nm Lead(Pb)Free Product-RoHS Compliant L1550-06 Infrared LED Lamp L1550-06 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1550nm. Features


    Original     		PDF L1550-06 L1550-06 1550nm. G8370-85. J-6512.