GA201

Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
Contextual Info: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level

Contextual Info: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses

Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C

fast diode for welder application

Contextual Info: VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability

Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

1853G

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability

Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Sfor1b42

Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0

Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

w438

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability

Contextual Info: VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE on SPT+ IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C

Contextual Info: GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

GB200TS60NPBF

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 200 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient

GB200TS60

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

GB200TS60N

Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

GA201

Abstract: GB201 lcle 10 100S GA200 GA200A GA201A GB200 GB200A GB201A
Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATU RES D ESCR IPTIO N • • • • • The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SCRs. With