GC1600 Search Results

Contextual Info: GC1600EE-+2 Diodes Dual Varactor Diode with Common Anode Ct{Cj} Nom. F Junction Cap.400f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-T Mounting StyleS

Microsemi Catalog 2000

Abstract: GC1601 30 MHz phase shifters GC1600 GC1600A GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: GC1600A – GC1613 TM CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors RoHS Compliant KEY FEATURES DESCRIPTION • Highest Q for 45 Volt Varactors • Lowest Rs www.MICROSEMI.com The GC1600 series varactors are silicon abrupt junction devices. They offer the

Contextual Info: GC1600A-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1600A – GC1613 TM CONTROL DEVICES 45 Volt Abrupt Junction Tuning Varactors RoHS Compliant K EY FEAT URES DESCRIPTION • Highest Q for 45 Volt Varactors • Lowest Rs www.MICROSEMI.com The GC1600 series varactors are silicon abrupt junction devices. They offer the

varactor diode notes

Abstract: varactors GC1600 GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606
Contextual Info: TOC Tuning Varactors 45 VOLT ABRUPT JUNCTION VARACTOR DIODES DESCRIPTION RATINGS: The GC1600 series varactors are silicon abrupt junction devices. They offer the highest Q and lowest series resistance available in a 45 Volt silicon varactor. Minimum Voltage breakdown: 45 V at 10 µA max

Contextual Info: GC1600B-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: TUNING VARACTORS 45-VOLT SILICON TUNING VARACTORS DESCRIPTION The GC1600 series tuning varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 45 volt tuning diodes. A unique silicon dioxide passivation process assures

Contextual Info: GC1600H-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: GC1600D-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: GC1600E-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC1600T-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

Contextual Info: GC1600F-+2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.800f C1/C2 Min. Capacitance Ratio4.2 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2000 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleMicro-I

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

GC1600

Abstract: GC1600A GC1601 GC1602 GC1603 GC1604 GC1605 GC1606 tsnh
Contextual Info: LO R A L / F R E d U E NC Y /S EI II CO ND N° _ m 96 D 0 0 796 D 7^-O ? - / ? 45"VOLT ^ » • SILICON TUNING VARACTORS S S 7 ci t i 5 1 0 0 D 0 7 T ti DESCRIPTION The G C 1 6 0 0 series tuning varactors are silicon abrupt ¡unc­ tion devices. They offer the highest Q and lowest resistance

C1914

Contextual Info: GflSD electron ics m e G C S e r ie s ELECTRICAL CHARACTERISTICS (TA= 2 5 °C R i w m Breakdown Voltage ( min) Vr Reverse Voltage Leakage Current (max) Capacitance Temperature C oefficien t (typl unless otherwise noted) 30 V dc 9 I r = 1 0 u A d c T CC

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

KV38S2

Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
Contextual Info: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios

C1708

Abstract: gc1602 GC1713
Contextual Info: \Æ HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics inc designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. S E R IE S M V205 M V206 L P 1 0 1 4 -1 0 3 8 E P I Of 4 *1038 • LOW IN D U CTA N C E

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

Gunn Diode

Abstract: x band gunn diode gunn effect GC15000 GC15001 GC15002 GC15003 GC15004 GC15005 GC15014
Contextual Info: LORAL/FREdUENCY/SEMICOND X>ND 96D 0 0 8 0 5 FREQUENCY^ D 557^21 ooooaos 2 LINEAR TUNING VAR ACTORS DESCRIPTION The F L T V A R is made using a controlled resistivity gra­ dient which provides a specialized C-V curve designed to provide linear tuning.