GCQ30A06 Search Results

Contextual Info: SBD T y p e : GCQ30A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

Contextual Info: 30A Avg. 60 Volts SBD GCQ30A06 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー

FAG 29 diode

Abstract: K/FAG 29 diode
Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A /60V FEATURES 1.2 .047 — 4.8<1.9) MAX O |SOUARE-PAKlTO-263AB (SMD) Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB > 914158 . ) 10.6 .417) 8.5U35) 9.6 .378)

GCQ30A06

Contextual Info: 30A Avg. 60 Volts SBD GCQ30A06 •最大定格 Maximum Ratings Item Symbol く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 平 均 整 流 電 流 Average Rectified Forward Current 実 効 順 電 流 R.M.S. Forward Current サ ー

Contextual Info: SBD T y p e : GCQ30A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

Contextual Info: SBD T y p e : GCQ30A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.9g ■最大定格 / Maximum Ratings

FCQ30A06

Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

Diode smd 5j

Abstract: J124 100-c30 C30T06Q C30T06Q-11A FCQ30A06 GCQ30A06 DIODE smd Wj SMD 23k g4 150H2
Contextual Info: SCHOTTKY 13830612 C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

GCQ30A06

Contextual Info: SBD T y p e : GCQ30A Q30A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

tc122 20 5 3

Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

GCQ30A06

Contextual Info: SBD T y p e : GCQ30A Q30A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: SBD T y p e : GCQ30A Q30A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Approx Net Weight: 1.9g Symbol Repetitive Peak Reverse Voltage

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04