Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 1.15 09? 0.5 0.4 t 2.54 spacing Collector SFH 305 Cathode (SFH 405) - o - 1) Detaching area for tools, flash not true to size. Approx. weight 0.02 g GE006137 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006137
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Untitled
Abstract: No abstract text available
Text: SIEMENS Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor 2.84 2.24 1.15. 0.90 SFH 305 COICN IO O •o m . io Cvi 0.15 05 0.4 hJ U 2.1 1.5 2.54 spacing Collector (SFH 305 Cathode (SFH 405) GE006137 1) Detaching area for tools, flash not true to size.
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GE006137
Photocurrent/pCE//poE25Â
023SbG5
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Untitled
Abstract: No abstract text available
Text: SFH305 Silicon NPN Phototransistor Dimensions in inches mm .112 Detaching area for tools. Flash not true to s iz e ) — (2.84) (2.24) .045 (1.15) .088 035 (0.9) .106 (2.7) .098 (2.5) .075 (1.9) .067(1.7) T 138'(3.5) 118(3.0) .142 (3.6) .126 (3.2) .118(3.0)
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SFH305
GE006137
lpcE/lpoE25Â
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Untitled
Abstract: No abstract text available
Text: SFH305 SIEMENS Silicon NPN Phototransistor Dimensions in inches mm Detaching area for tools Flash not true to size .142 (3.6) .126 (3.2) .045 (1.15) .035 (0.9) .075(1.9) .067(1.7) .118(3.0) .098 2.5) .138(3.5) .010 (.25) .118(3.0) .006 (.IS P Cathode TTOO-^J
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SFH305
GE006137
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: SFH405 SIEMENS Infrared Emitter Dimensions In inches mm .045(1.15) \03 5 (0.9) .142(3.6) .126 (3.2) Detaching area for tools, Flash not true to size. .118(3.0) .010 (.25) .006 (.15)-' FEATURES • GaAs IR emitter, made in liquid phase epitaxy process • High reliability
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SFH405
GE006137
0HWK183
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