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    fototransistor

    Abstract: No abstract text available
    Text: SIEMENS GaAs-lnfrarot-Sendediode GaAs Infrared Emitter 5 .8 4 1 6 .5 L 1 6 .00 1 .5 2 5.5 9 1.52 1.29 1.14 .2 .5 4 2.03 JLJ r-. o-i I-“ S lr M « T IRL 80 A in k> m ^C£>W IO 1.52 Anode Voo i ro O T c-j c-i 1.70 1.45 Plastic m arking GE006461 -iko co R = 0 .7 6


    OCR Scan     		PDF GE006461 fototransistor

    IRL80A

    Abstract: No abstract text available
    Text: SIEM EN S GaAs -fit IR L 80A GaAIAs IRL 81A Infrared Emitter Dimensions in inches mm .660(16.51) .630 (16,00) - .230(5.84) .220 (5.59) .100(2.54) .080 (2.03) 092 (2.34) .082 (2.08) |-.06 L io o (2.54) Plastic méiKing .061 (1.52}-J •OK) (0.76) R - ^ .025 (0.64)


    OCR Scan     		PDF IRL-80A GE006461 IRL80A: IRL81A: IRL81 IRL80A IRL81A IRL81A IRL80A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs IRL 80A IRL 81A GaAIAs Infrared Emitter Dimensions in inches mm .650(16.51) .630 (16.00) r t .06(1.52) 100 (2.54) Anode APPLICATIONS • Beam interruption usage • Light barriers DESCRIPTION .100 (2.54) .080 (2.03) 092 (2.34) 082 (2.08) Cathode


    OCR Scan     		PDF IRL80A: IRL81A: 18-pln fl535t