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    MGFC39V5964A

    Abstract: pj 59
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A fin » cn 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 3 9 V 5 9 6 4 A is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4


    OCR Scan     		PDF MGFC39V5964A MGFC39V5964A 10MHz pj 59

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A 5 . 9 —6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET •>rnC V DESCRIPTION The M G FC 3 9 V 5 9 6 4 A is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 —6 .4 GHz band amplifiers. The hermetically sealed metal ceramic


    OCR Scan     		PDF GFC39V5964A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF GFC39V5964A